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PDF EMB26N10E Data sheet ( Hoja de datos )
| Número de pieza | EMB26N10E | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
30mΩ
ID 50A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=30A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/8/15
EMB26N10E
LIMITS
±20
50
35
150
30
45
22.5
128
50
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
0.97
62.5
UNIT
°C / W
p.1
1 page  
EMB26N10E
10
Gate Charge Characteristics
I D = 30A
8
4000
Ciss
3000
Capacitance Characteristics
f = 1MHz
VG S = 0 V
6
4
2
0
0
VD S = 25V 50V
10 20 30
Q g ‐ Gate Charge( nC )
40
2000
Coss
1000
Crss
0
0
25 50 75
VD S ‐ Drain‐Source Voltage( V )
100
103
Maximum Safe Operating Area
102 RDS(ON) Limited
101
10μs
100μs
1ms
10ms
DC
100
TC=25°C
RθJC=0.97°C/W
Vgs=10V
Single Pulse
10‐1
100
VDS, Drain‐So10u1rce Voltage( V )
102
Single Pulse Maximum Power Dissipation
3000 Single Pulse
Rθ JC = 0.97° C/W
TC = 25° C
2500
2000
1500
1000
500
0
0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10‐1
0.05
0.02
0.01
10‐2
single pulse
※Note :
1. RθJC(t)=0.97°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100
t1,Time( sec )
101
2013/8/15
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB26N10E.PDF ] | |
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