|
|
Número de pieza | EMB06N03E | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB06N03E (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
6mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB06N03E
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
80
50
170
Avalanche Current
IAS 53
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=53A, RG=25Ω
L = 0.05mH
EAS
EAR
140
40
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
69
27
‐55 to 150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=25V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
1.8
°C / W
75
2012/3/9
p.1
1 page EMB06N03E
G A T E C H A R G E C H A R A C T E R IS T IC S
12
ID = 3 0 A
10
8
6
VDS =5V
15V
10V
10 4
10 3
C a p a c ita n c e C h a ra c te ristic s
C iss
C o ss
C rss
4
10 2
2
0
0
15 30
45
Q g ,G A T E C H A R G E (n C )
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
30
MAXIMUM SAFE OPERATING AREA
300
200
100 R d s ( o n ) Limit
10μ s
100μ s
50
1ms
20
10
5
10ms
100ms
DC
2
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
2500
SRθI N JC G= L1E. 8P° UC/LWSE
TC = 25° C
2000
1500
1000
1
0.5
VG S = 10V
SINGLE PULSE
Rθ J C = 1.8 °C/W
Tc = 25 °C
0.5 1
23
5 10
VD S ,DRAIN‐ SOURCE VOLTAGE
20 30 50
500
0
0.01
Transient Thermal Response Curve
1
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
10‐1
Notes:
DM
1.Duty Cycle,D =
t1
t2
2.Rθ J C =1.8° C/W
3.TJ ‐ TC = P * R θ J C (t)
4.R θ J C (t)=r(t) * RθJC
1 10 100
t 1 ,Time (sec)
0.1 1 10
SINGLE PULSE TIME (SEC)
1000
100
1000
2012/3/9
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB06N03E.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB06N03A | Field Effect Transistor | Excelliance MOS |
EMB06N03E | Field Effect Transistor | Excelliance MOS |
EMB06N03G | Field Effect Transistor | Excelliance MOS |
EMB06N03GH | Field Effect Transistor | Excelliance MOS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |