(PDF) EMB55N03J Datasheet - Field Effect Transistor

Número de pieza	EMB55N03J
Descripción	Field Effect Transistor
Fabricantes	Excelliance MOS
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No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 55mΩ ID 3.5A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL VGS ID IDM PD Tj, Tstg TYPICAL Junction‐to‐Ambient RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 2013/8/30 EMB55N03J LIMITS ±20 3.5 2.4 14 1.25 0.8 ‐55 to 150 UNIT V A W °C MAXIMUM 100 UNIT °C / W p.1 1 page Ordering & Marking Information: Device Name: EMB55N03J for SOT‐23 12: Device Code, 12 for EMB55N03J ABC: Date Code Outline Drawing Dimension in mm Dimension A A1 A2 b C D E E1 e e1 F G L1 Min. 0.85 0 0.30 0.08 2.75 2.30 1.35 0.85 0.2 0.35 Typ. 0.80 0.95 1.90 Max. 1.25 0.13 0.50 0.20 3.10 2.70 1.80 Footprint 1.38 0.6 0.75 2013/8/30 EMB55N03J p.5 5 Page

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PDF EMB55N03J Data sheet ( Hoja de datos )