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PDF EMB60N10G Data sheet ( Hoja de datos )
| Número de pieza | EMB60N10G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
60mΩ
ID 6A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=10A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/11/26
EMB60N10G
LIMITS
±20
6
4
24
10
5
2.5
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page  
Gate Charge Characteristics
10
I D = 6A
8
6
VD S = 25V
50V
4
2
0
0
10 20 30
Q g ‐ Gate Charge( nC )
40
100
Maximum Safe Operating Area
10 R D S (O N )Limit
1
0.1
100μs
1ms
10ms
100ms
1s
DC
VG S = 10V
Single Pulse
R JA = 125°C/W
0.01 TA = 25°C
0.1
1
10 100
VD S ‐ Drain‐Source Voltage( V )
1000
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
2013/11/26
EMB60N10G
1600
1200
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
800
400
Coss
Crss
0
0 25 50 75
VD S ‐ Drain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB60N10G.PDF ] | |
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