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PDF EMB12N03G Data sheet ( Hoja de datos )
| Número de pieza | EMB12N03G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
12mΩ
ID 12A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB12N03G
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
12
10
48
Avalanche Current
IAS 12
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=12A, RG=25Ω
L = 0.05mH
EAS
EAR
7.2
3.6
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
2.5
1
‐55 to 150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=15A, Rated VDS=25V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
25
°C / W
50
2013/8/30
p.1
1 page  
G a te C h a rg e C h a ra c te ris tic s
12
ID = 1 2 A
10
8
6
V DS =5V
15V
10V
4
2
0
0
5 10
Q g ,G a te C h a rg e ( n C )
15
Maximum Safe Operating Area
100
R D S (O N ) Limit
10
100μs
1ms
10ms
1
100ms
1s
0.1
VG S = 10V
Single Pulse
R J A = 125°C/W
10s
DC
T A = 25°C
0.01
0.1
1 10
VD S ‐ Drain‐Source Voltage( V )
100
1
Duty Cycle = 0.5
0.1
0.2
0.1
0.05
Transient Thermal Response Curve
0.01
0.02
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
2013/8/30
10 4
C a p a c ita n c e C h a ra c te ris tic s
EMB12N03G
10 3
10 2
C iss
C o ss
C rss
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
30
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125° C/W
40 TA = 25° C
30
20
10
0
0.001
0.01 0.1
1
10
100 1000
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB12N03G.PDF ] | |
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