EMB06N03GH Datasheet PDF - Excelliance MOS
| Part Number | EMB06N03GH | |
| Description | Field Effect Transistor | |
| Manufacturers | Excelliance MOS | |
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There is a preview and EMB06N03GH download ( pdf file ) link at the bottom of this page. Total 5 Pages | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
6mΩ
ID 18A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=20A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB06N03GH
LIMITS
±20
18
12
72
20
20
10
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/8/12
TYPICAL
MAXIMUM
25
50
UNIT
°C / W
/p.1
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EMB06N03GH
G a te C h a rg e C h a ra c te ris tic s
1 2 ID = 1 8 A
10 4
C a p a c ita n c e C h a ra c te ris tic s
10
8
6
V DS =5V
15V
10V
4
2
0
0
15 30
Q g ,G a te C h a rg e ( n C )
45
1 0 0
M a xim u m S a fe O p e ra tin g A re a
R D S (O N ) Lim it
100μ s
10
1m s
10m s
100m s
1
1s
10s
DC
0 .1
VG S = 1 0 V
Sin g le P u lse
R JA = 1 2 5 ° C / W
T A = 2 5 ° C
0 .0 1
0.1 1
10 100
V D S ‐ D r a i n ‐ S o u r c e V o l t a g e ( V )
10 3
10 2
C is s
C oss
C rss
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
30
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125° C/W
40 TA = 25° C
30
20
10
0
0.001
0.01 0.1
1
10 100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.R θ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2013/8/12
/p.5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMB06N03GH electronic component. |
| Information | Total 5 Pages | |
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Featured Datasheets
| Part Number | Description | MFRS |
| EMB06N03G | The function is Field Effect Transistor. Excelliance MOS | |
| EMB06N03GH | The function is Field Effect Transistor. Excelliance MOS | |
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