|
|
PDF EMB04N03HR Data sheet ( Hoja de datos )
| Número de pieza | EMB04N03HR | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EMB04N03HR (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
4.0mΩ
ID 75A
UIS, Rg 100% Tested
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB04N03HR
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
75
45
160
Avalanche Current
IAS 53
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=53A, RG=25Ω
L = 0.05mH
EAS
EAR
140
40
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
50
26
‐55 to 150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=30V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2.5
°C / W
50
2012/3/26
p.1
1 page  
G a te C h a rg e C h a ra c te ris tic s
12
ID = 3 0 A
10
8
6
4
VDS =5V
15V
10V
10 4
10 3
10 2
C a p a c ita n c e C h a ra c te ris tic s
C is s
EMB04N03HR
C rss
C o ss
2
0
0 15 30 45
Q g ,G a te C h a rg e ( n C )
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
30
1000
M A XIM U M SA FE O PER A TIN G A R EA
1 0 0
R d s ( o n ) L im it
10
1 0 μ s
1 0 0 μ s
1ms
D1C0100mms s
3000
2500
2000
1500
SRθI N JC G= L2E. 5P° UC/LWSE
TC = 25° C
1 VG S = 1 0 V
SIN G LE PU LSE
R θ J C = 2 .5 °C / W
T c = 2 5 °C
0.1
0 .1
1
10
V D S ,D R A IN ‐ S O U R C E V O L T A G E ( V )
100
1
Transient Therm al Response Curve
D uty Cycle = 0.5
0 .5
1000
500
0
0.01
0.1 1 10 100
SINGLE PULSE TIME ( mSEC )
1000
0.3
0 .2 0.2
0.1 0.1
0.05
0 .0 5
0.02
0.03
0 .0 1
0.02
S in g le P u ls e
0.01
1 0‐2
1 0‐1
N otes:
DM
1.D uty Cycle,D =
t1
t2
2 .R θ J C = 2 .5 °C / W
3 .TJ ‐ T C = P * R θ J C (t )
4 .R θ J C ( t ) = r ( t ) * Rθ JC
1 10
t 1 ,T im e ( m S E C )
100
1000
2012/3/26
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB04N03HR.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EMB04N03H | Field Effect Transistor | Excelliance MOS |
| EMB04N03HR | Field Effect Transistor | Excelliance MOS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |