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Número de pieza | EMB12N04V | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB12N04V (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
40V
D
RDSON (MAX.)
12.8mΩ
ID 18A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=12A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/8/16
EMB12N04V
LIMITS
±20
18
13
72
12
7.2
3.6
21
8.3
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
W
°C
MAXIMUM
6
50
UNIT
°C / W
p.1
1 page EMB12N04V
10
I D = 12A
8
6
Gate Charge Characteristics
VD S = 15V 20V
4
2
0
0 8 16 24
Q g ‐ Gate Charge( nC )
32
1600
1200
800
400
0
0
Capacitance Characteristics
f = 1MHz
VG S = 0 V
Ciss
Coss
Crss
10 20 30
VD S ‐ Drain‐Source Voltage( V )
40
Maximum Safe Operating Area
100
R D S (O N ) Limit
10
100μs
1ms
10ms
100ms
1
0.1
VG S = 10V
Single Pulse
R J A = 50°C/W
TA = 25°C
1s
10s
DC
0.01
0.1
1 10
VD S ‐ Drain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 50°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1
1
10 100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.R θ J A = 50°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2013/8/16
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB12N04V.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB12N04A | Field Effect Transistor | Excelliance MOS |
EMB12N04G | Field Effect Transistor | Excelliance MOS |
EMB12N04V | Field Effect Transistor | Excelliance MOS |
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