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What is EMB50N10S?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB50N10S Datasheet PDF - Excelliance MOS

Part Number EMB50N10S
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMB50N10S download ( pdf file ) link at the bottom of this page.





Total 5 Pages



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No Preview Available ! EMB50N10S datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
100V 
D
RDSON (MAX.) 
50mΩ 
ID  8A 
G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=15A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TA = 25 °C 
TA = 100 °C 
Operating Junction & Storage Temperature Range 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
342°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
 
2013/3/26 
EMB50N10S
LIMITS 
±20 
8 
6 
32 
15 
11.25 
5.62 
3.0 
1.2 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
21 
42 
UNIT 
°C / W 
p.1 

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EMB50N10S equivalent
 
 
 
Gate Charge Characteristics
  10
I D  = 8A
 
8
  VD  S   = 25V
50V
 6
 4
 
 2
 0
0
 
15 30 45
Q g  ‐ Gate Charge( nC )
60
 
100
 
Maximum Safe Operating Area
  10 R D  S (O  N )Limit
 
 1
100μs
1ms
10ms
100ms
  1s
  0.1
DC
    VG  S = 10V
  Single Pulse
  R  JA = 42°C/W
  0.01   TA   = 25°C
0.1
1
10 100 1000
VD S   ‐ DrainSource Voltage( V )
 
 1
Transient Thermal Response Curve
  Duty Cycle = 0.5
  0.2
0.1
0.1
  0.05
  0.02
0.01
  0.01
Single Pulse
 
  0.001
10 4
10 3
10 2
10 1
1
  t 1 ,Time (sec)
 
 
 
 
 
 
2013/3/26 
  EMB50N10S
4000
3000
Ciss
Capacitance Characteristics
f  =  1MHz
VG  S  = 0 V
2000
1000
0
0
Coss
Crss
25 50 75
VD S  ‐ DrainSource Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ  J A = 42°C/W
40 TA  = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ  J  A =42°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) * RθJA
10 100
1000
p.5 


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Part Details

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Information Total 5 Pages
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