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PDF EMBJ7A25G Data sheet ( Hoja de datos )
| Número de pieza | EMBJ7A25G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
250V
RDSON (MAX.)
1.7Ω
ID 0.5A
Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
PD
Tj, Tstg
EMBJ7A25G
LIMITS
±20
0.5
0.3
2
2
1.3
‐55 to 150
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/8/6
TYPICAL
MAXIMUM
25
62.5
UNIT
°C / W
p.1
1 page  
EMBJ7A25G
10
Gate Charge Characteristics
I D = 0.25A
8
6
4
VD S = 62V 125V
2
0
0
5 10 15
Q g ‐ Gate Charge( nC )
20
1000
900
800
Capacitance Characteristics
f = 1M Hz
V G S = 0 V
700 Ciss
600
500
400
300
200
100 Coss
0 Crss
0 20 40 60 80
VD S ‐ D ra in ‐S o u rc e V o lta g e ( V )
100
10
M a x im u m S a fe O p e ra tin g A re a
1 R D S (O N )L im it
0 .1
10uS
100uS
1mS
D
1
C
0
0
m
10m
S
S
0 .1 0
V G S = 1 0 V
S in g le P u lse
R JA = 1 2 5 ° C / W
T A = 2 5 ° C
0 .0 0 1
1 10 100
V D S ‐ D r a i n ‐ S o u r c e V o l t a g e ( V )
1000
Single Pulse Maximum Power Dissipation
5
SINGLE PULSE
VGS= 10V
4
RθJA=125°C/W
TA=25°C
3
2
1
0
0.1 1
10 100 1000
Single Pulse Time( sec )
1
Transient Thermal Response Curve
D=0.5
0.5
0.2
0.2
0.1
0.1
0.05
0.05 0.02
0.01
0.02
Single Pulse
0.01
0.0001
0.001
0.01 0.1
1
t1, Time( sec )
RθJA(t) = r(t) * RθJA
RθJA=125°C/W
t1
t2
TJ‐TA=P*RθJA(t)
Duty Cycle, D= t1/ t2
10 100 300
2012/8/6
p.5
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