(PDF) EMF60P02K Datasheet - Field Effect Transistor

Número de pieza	EMF60P02K
Descripción	Field Effect Transistor
Fabricantes	Excelliance MOS
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No Preview Available ! P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐20V D RDSON (MAX.) 60mΩ ID ‐4.5A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction‐to‐Ambient RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 2014/1/7 EMF60P02K LIMITS ±12 ‐4.5 ‐3.2 ‐18 1.25 0.8 ‐55 to 150 UNIT V A W °C MAXIMUM 100 UNIT °C / W p.1 1 page Ordering & Marking Information: Device Name: EMF60P02K for TSOP‐6 25ABC #1 25: Device Code, 25 for EMF60P02K ABC: Date Code Outline Drawing B1 B e D AF b A1 Dimension in mm Dimension A A1 B B1 b C D e F G Min. 0.70 0 2.50 1.50 0.30 0.08 2.70 0.75 0.30 Typ. 2.80 1.60 0.40 2.90 0.95 Max. 1.00 0.10 3.10 1.70 0.50 0.20 3.10 1.10 0.60 Footprint C G 2014/1/7 EMF60P02K p.5 5 Page

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PDF EMF60P02K Data sheet ( Hoja de datos )