|
|
PDF EMB09P03A Data sheet ( Hoja de datos )
| Número de pieza | EMB09P03A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EMB09P03A (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
9mΩ
ID
‐75A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB09P03A
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=‐20A, RG=25Ω
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
±25
‐75
‐50
‐160
‐20
20
78
31
‐55 to 175
V
A
mJ
W
°C
100% UIS testing in condition of VD=‐15V, L=0.1mH, VG=‐10V, IL=‐15A, Rated VDS=‐30V P‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2012/3/21
1.6
62.5
°C / W
p.1
1 page  
10
I D = ‐ 25A
Gate Charge Characteristics
8
VD S = ‐ 5V
‐ 10V
‐ 15V
6
EMB09P03A
5000
4000
3000
Capacitance Characteristics
f = 1 MHz
VG S = 0 V
Ciss
4 2000
2 1000
Coss
0
0
15 30
45
60 75
Q g ‐ Gate Charge( nC )
0 Crss
0 5 10 15 20 25 30
‐ VD S , Drain‐Source Voltage( V )
300
200
100 R d s (o n ) Limit
50
20
10
5
MAXIMUM SAFE OPERATING AREA
10μ s
100μ s
1ms
D10C100mmss
2
1
0.5
0.5
VG S = ‐10V
RSIθ N J C G= L1E. 6P° UC/LWSE
Tc = 25 °C
1 10
‐VD S ,DRAIN‐ SOURCE VOLTAGE( V )
100
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
SRθI N JC G= L1E. 6P° UC/LWSE
TC = 25° C
2500
2000
1500
1000
500
0 0.01
0.1 1 10 100
SINGLE PULSE TIME ( mSEC )
1000
1 Transient Thermal Response Curve
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
10‐1
Notes:
DM
1 10
t 1 ,Time ( mSEC )
1.Duty Cycle,D =
t1
t2
2.Rθ J C =1.6°C/W
3.TJ ‐ TC = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
100
1000
2012/3/21
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB09P03A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EMB09P03A | Field Effect Transistor | Excelliance MOS |
| EMB09P03H | Field Effect Transistor | Excelliance MOS |
| EMB09P03V | Field Effect Transistor | Excelliance MOS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |