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Número de pieza | EMB07P03A | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB07P03A (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
7.5mΩ
ID
‐80A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB07P03A
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=‐35A, RG=25Ω
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
±25
‐80
‐55
‐160
‐35
61.25
78
31
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=‐15V, L=0.1mH, VG=‐10V, IL=‐25A, Rated VDS=‐30V P‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2012/4/25
1.6
62.5
°C / W
p.1
1 page 10
I D = ‐ 25A
8
6
Gate Charge Characteristics
VD S = ‐ 5V
‐ 15V
‐ 10V
4
7500
6000
4500
3000
EMB07P03A
Capacitance Characteristics
f = 1 MHz
VG S = 0 V
Ciss
2 1500
Coss
0
0 15 30 45 60 75
Q g ‐ Gate Charge( nC )
0 Crss
0 5 10 15 20 25 30
‐ V D S , Drain‐Source Voltage( V )
300
100 R d s (o n ) Limit
10
MAXIMUM SAFE OPERATING AREA
10μ s
100μ s
1ms
D10C100mmss
1
0.5
0.5
VG S = ‐10V
RSIθ N J C G= L1E. 6P° UC/LWSE
Tc = 25 °C
1 10
‐VD S ,DRAIN‐ SOURCE VOLTAGE( V )
100
1 Transient Thermal Response Curve
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
10‐1
Notes:
DM
1 10
t 1 ,Time ( mSEC )
1.Duty Cycle,D =
t1
t2
2.Rθ J C =1.6°C/W
3.TJ ‐ TC = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
100
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
SRθI N JC G= L1E. 6P° UC/LWSE
TC = 25° C
2500
2000
1500
1000
500
0 0.01
0.1 1 10 100
SINGLE PULSE TIME ( mSEC )
1000
1000
2012/4/25
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB07P03A.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB07P03A | Field Effect Transistor | Excelliance MOS |
EMB07P03CS | Field Effect Transistor | Excelliance MOS |
EMB07P03G | Field Effect Transistor | Excelliance MOS |
EMB07P03V | Field Effect Transistor | Excelliance MOS |
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