|
|
Número de pieza | EMDA0P10F | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMDA0P10F (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐100V
D
RDSON (MAX.)
120mΩ
ID
‐22A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐15A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/12/20
EMDA0P10F
LIMITS
±20
‐22
‐15
‐75
‐15
22.5
11.25
38
15
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
3.3
62.5
UNIT
°C / W
p.1
1 page EMDA0P10F
Gate Charge Characteristics
10
I D = ‐ 11A
8
V D S = ‐ 50V
6
‐ 80V
4
2
0
0 15 30
Q g ‐ Gate Charge(nC)
45
100
10
R D S ( O N )L im it
1
M a x im u m S a fe O p e ra tin g A re a
10uS
100uS
1mS
D
10
C
10m
0mS
S
60
0 .1
V G S = ‐ 1 0 V
S in g le P u lse
R JC = 3 . 3 ° C / W
T C = 2 5 ° C
0 .0 1
1 10 100
‐ V D S ‐ D r a i n ‐ S o u r c e V o l t a g e ( V )
1000
5000
4000
3000
2000
Capacitance Characteristics
Ciss
f = 1 MHz
VG S = 0 V
1000
0
0
3000
2500
Coss
Crss
10 20
30
‐ VD S , Drain‐Source Voltage( V )
40
Single Pulse Maximum Power Dissipation
RSTiθC n J= Cg = l2e 35 P°. 3Cu °Cls/eW
2000
1500
1000
500
0
0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
100
D=0.5
0.2
0.1
10‐1
0.05
0.02
0.01
10‐2
Transient Thermal Response Curve
single pulse
※Note :
1. RθJC(t)=3.3°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100
t1,Time( sec )
101
2013/12/20
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMDA0P10F.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMDA0P10F | Field Effect Transistor | Excelliance MOS |
EMDA0P10G | Field Effect Transistor | Excelliance MOS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |