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PDF EMB12P04F Data sheet ( Hoja de datos )
| Número de pieza | EMB12P04F | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐40V
D
RDSON (MAX.)
12.6mΩ
ID
‐25A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐25A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/12/20
EMB12P04F
LIMITS
±20
‐25
‐18
‐100
‐25
31.25
15
50
20
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.5
75
UNIT
°C / W
p.1
1 page  
EMB12P04F
10
I D = ‐ 25A
8
6
4
Gate Charge Characteristics
V D S = ‐ 15V
‐ 20V
5000
4000
3000
2000
Capacitance Characteristics
f = 1 MHz
VG S = 0 V
Ciss
2 1000
Coss
0
0 15 30 45 60
Q g ‐ Gate Charge( nC )
0 Crss
0 10 20 30 40
‐ VD S , Drain‐Source Voltage( V )
MAXIMUM SAFE OPERATING AREA
300
100 R d s (o n ) Limit
10μ s
100μ s
10 1ms
10ms
D10C0ms
1
0.5
0.5
VG S = ‐10V
SINGLE PULSE
Rθ J C = 2.5 °C/W
Tc = 25° C
1 10
‐VD S ,DRAIN‐ SOURCE VOLTAGE( V )
100
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000 RSθI N JC G= L2E. 5P° UC/LWSE
TC = 25° C
2500
2000
1500
1000
500
0
0.01
0.1 1 10 100
SINGLE PULSE TIME ( mSEC )
1000
Effective Transient Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
t1 , Pulse Width(s)
0.01
Notes:
PDM
t1
t2 t1
1.Duty Cycle,D =
t2
2.Rθ J C =2.5°C/W
3.TJ ‐ TC = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
0.1 1
2013/12/20
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB12P04F.PDF ] | |
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