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Número de pieza | EMB80P03G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB80P03G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
80mΩ
ID
‐3.5A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/12/31
EMB80P03G
LIMITS
±20
‐3.5
‐3
‐14
2.5
1
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page EMB80P03G
10
ID = ‐ 3A
Gate Charge Characteristics
8
6
VD S = ‐ 5V
‐ 10V
‐ 15V
4
2
0
0
24 68
Q g ‐ Gate Charge( nC )
10
480
400
320
240
160
80
0
0
Capacitance Characteristics
Ciss
f = 1MHZ
VG S = 0V
Coss
Crss
5 10 15 20
‐ VD S , Drain‐Source Voltage( V )
25
30
100
Maximum Safe Operating Area
10
R D S ( O N )Limit
1
100μ s
1ms
10ms
100ms
1s
10s
DC
0.1
VG S = ‐10V
SINGLE PULSE
0.01 RTθ A J =A = 2 15°2 C5° C/W
0.1
1
10
‐VD S ,Drain‐Source Voltage( V )
50
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125° C/W
40 TA = 25° C
30
20
10
0
0.001
0.01 0.1
1
10
100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4 10‐3 10‐2
10 ‐1 1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2012/12/31
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB80P03G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB80P03G | Field Effect Transistor | Excelliance MOS |
EMB80P03J | Field Effect Transistor | Excelliance MOS |
EMB80P03JS | Field Effect Transistor | Excelliance MOS |
EMB80P03VAT | Field Effect Transistor | Excelliance MOS |
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