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PDF EMB50P03G Data sheet ( Hoja de datos )
| Número de pieza | EMB50P03G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
60mΩ
ID ‐6A G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/10/25
EMB50P03G
LIMITS
±20
‐6
‐5
‐24
2.5
1
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page  
EMB50P03G
10
I D = ‐6A
8
6
4
2
0
02
Gate Charge Characteristics
VD S = ‐5V
‐15V
‐10V
4 6 8 10 12
Q g ,Gate Charge( nC )
1000
900
800
700
600
500
400
300
200
100
0
0
Capacitance Characteristics
f = 1MHz
V G S = 0 V
Ciss
Coss
Crss
5 10 15 20 25
‐VD S ‐ Drain‐Source Voltage( V )
30
100
Maximum Safe Operating Area
R D S ( O N )Limit
10
1
10ms
100ms
1s
10s
100 μ s
1ms
DC
0.1
VG S = ‐10V
SINGLE PULSE
Rθ J A = 125° C/W
0.01 T A = 25° C
0.1
1 10
‐VD S ,Drain‐Source Voltage( V )
100
30
25
20
15
10
5
00.01
SINGLE PULSE
RT A θ J= A = 2 15°2 C5° C/W
0.1 1 10
Single Pulse Time( sec )
100 300
1
D=0.5
Transient Thermal Response Curve
0.2
0.1 0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1 , Time( ms )
R JA(t)= r(t)
R
JA
R JA = 125 C/W
P(pk)
t1
t2
Tj - TA = P R JA (t)
Duty Cycle,D= t1 / t 2
10 100
1000
2012/10/25
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB50P03G.PDF ] | |
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