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Número de pieza | EMB14P03G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB14P03G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
14mΩ
ID
‐12A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB14P03G
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=‐20A, RG=25Ω
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
±25
‐12
‐9
‐48
‐20
20
2.5
1
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=‐15V, L=0.1mH, VG=‐10V, IL=‐12A, Rated VDS=‐30V P‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/12/30
25
°C / W
50
p.1
1 page 10
I D = ‐ 12A
8
Gate Charge Characteristics
6 ‐ 10V
VD S = ‐ 5V ‐ 15V
4
EMB14P03G
3000
2400
1800
Capacitance Characteristics
f = 1 MHz
VG S = 0 V
Ciss
1200
2
0
0
10 20
30
40
Q g ‐ Gate Charge( nC )
Maximum Safe Operating Area
100
R D S ( O N ) Limit
10
1
100s
1ms
10ms
100ms
1s
10s
DC
0.1
V G S = ‐ 10 V
Single Pulse
Rθ J A = 125° C / W
0.01 T A = 25° C
0.1 1 10
‐VS D , Drain ‐ Source Voltage(V)
50
100
600
0
0
Coss
Crss
5 10 15 20 25
‐ VD S , Drain‐Source Voltage( V )
30
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125° C/W
40 TA = 25° C
30
20
10
0
0.001
0.01 0.1 1 10 100 1000
t 1 ,Time (sec)
1
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.01
0.02
0.01
0.001
10 ‐4
Single Pulse
10‐3
Transient Thermal Response Curve
10‐2 10‐1
1
t1 ,Time (sec)
Notes:
P DM
t1
t2 t1
1.Duty Cycle,D =
t2
2.R θ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2012/12/30
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB14P03G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB14P03G | Field Effect Transistor | Excelliance MOS |
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