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Datasheet EMB21C03S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | EMB21C03S | Field Effect Transistor
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS RDSON (MAX.)
30V ‐30V 21mΩ 35mΩ
ID
7.5A
‐6A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE |  Excelliance MOS | transistor |
EMB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | EMB02K03HP | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V
RDSON (MAX.) 5.5mΩ
30V 2.6mΩ
D2 / S1
ID 50A 83A
D1
UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free Excelliance MOS transistor | | |
| 2 | EMB02N03HR | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
1.7mΩ
ID
100A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Oth Excelliance MOS transistor | | |
| 3 | EMB02N03HS | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
2.5mΩ
ID
100A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Oth Excelliance MOS transistor | | |
| 4 | EMB02N60AB | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
4.0Ω
ID 2A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwi Excelliance MOS transistor | | |
| 5 | EMB02N60CSB | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
4.0Ω
ID 2A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwi Excelliance MOS transistor | | |
| 6 | EMB02Q03HP | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V 30V RDSON (MAX.) 5.0mΩ 2.0mΩ ID 53A 95A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATING Excelliance MOS transistor | | |
| 7 | EMB03K03HP | Field Effect Transistor (Preliminary)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V
RDSON (MAX.) 7mΩ
30V 3.5mΩ
D2 / S1
ID 15A 25A
D1
UIS, Rg 100% Tested Pb‐Free Lead Plating & Ha Excelliance MOS transistor | |
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