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PDF EMF20C02G Data sheet ( Hoja de datos )
| Número de pieza | EMF20C02G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EMF20C02G (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS
20V ‐20V
RDSON (MAX.)
20mΩ 40mΩ
ID 6A ‐5A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=6A, RG=25Ω(N)
L = 0.1mH, ID=‐5A, RG=25Ω(P)
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/1/11
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
EMF20C02G
LIMITS
N‐CH
P‐CH
±12 ±12
6 ‐5
4 ‐3.3
24 ‐20
6 ‐5
1.8 1.25
UNIT
V
A
mJ
0.9 0.625
2
0.8
‐55 to 150
W
°C
MAXIMUM
25
62.5
UNIT
°C / W
p.1
1 page  
N‐Channel
25
On‐Region Characteristics
VGS= 4.5V 3.0V
2.5V
20
15
10
5
0
0
0.4
0.8 1.2
1.6 2
VDS, Drain‐Source Voltage( V )
On‐Resistance Variation with Temperature
1.9
I D = 6A
VG S = 4.5V
1.6
1.3
1.0
0.7
0.4
‐50 ‐25
0 25 50 75 100 125 150
T J ‐ Junction Temperature (°C)
20
Transfer Characteristics
VDS= 5V
16
TA= -55°C 25°C 125°C
12
8
4
0
0.5 1
1.5 2
2.5 3
VGS, Gate‐Source Voltage( V )
2013/1/11
EMF20C02G
On‐Resistance Variation with
2.5 Drain Current and Gate Voltage
2
1.5
VGS= 2.5V
1
3.0V
4.5V
0.5
0 6 12 18
ID, Drain Current(A)
24
On‐Resistance Variation with Gate‐Source Voltage
0.08
0.07 I D = 3 A
0.06
0.05
0.04
0.03
0.02
0.01
0
1
T A = 125°C
T A = 25°C
23
4
VG S ‐ Gate‐Source Voltage( V )
5
Body Diode Forward Voltage Variation
with Source Current and Temperature
100
10 VGS= 0V
1
0.1
0.01
0.001
TJ= 125°C 25°C
-55°C
0.0001
0
0.2 0.4 0.6 0.8 1
VSD, Body Diode Forward Voltage( V )
1.2
p.5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet EMF20C02G.PDF ] | |
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