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부품번호 | EMB21C03G 기능 |
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기능 | Field Effect Transistor | ||
제조업체 | Excelliance MOS | ||
로고 | |||
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS
RDSON (MAX.)
30V ‐30V
21mΩ 35mΩ
ID
7.5A
‐6A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB21C03G
LIMITS
UNIT
Gate‐Source Voltage
VGS
N‐CH
P‐CH
V
±20 ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=7.5A, RG=25Ω(N)
L = 0.1mH, ID=‐6A, RG=25Ω(P)
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
7.5 ‐6
5.5 ‐5
30 ‐24
10 ‐10
2.8 1.8
1.4 0.9
2
0.8
‐55 to 150
A
mJ
W
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=7.5A, Rated VDS=30V N‐CH
100% UIS testing in condition of VD=15V, L=0.1mH, VG=‐10V, IL=‐6A, Rated VDS=‐30V P‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
Junction‐to‐Ambient3
2012/10/25
RJC
RJA
25
62.5
°C / W
p.1
3Pulse width limited by maximum junction temperature.
Ordering & Marking Information:
Device Name: EMB21C03G for SOP‐8
B21
C03
ABCDEFG
AB2B1CCD0E3F:G D: eDvaictee CNoadmee
ABCDEFG: Date Code
Outline Drawing
F
I
GI
DE
BC
A
H
J
K
Dimension in mm
Dimension A B C D E F G H I J K
Min.
4.70 3.70 5.80 0.33
1.20 0.08 0.40 0.19 0.25 0∘
Typ.
1.27
Max.
5.10 4.10 6.20 0.51
1.62 0.28 0.83 0.26 0.50 8∘
2012/10/25
EMB21C03G
p.4
4페이지 P‐Channel
25
V G S = ‐10V
Typical Output Characteristics
20
‐7.0V
‐6.0V
15
‐5.0V
‐4.5V
10
5
0
01 2 3 4 5
‐VD S ‐ Drain‐Source Voltage( V )
On‐Resistance Variation with Temperature
1.9
ID = ‐6 A
VG S = ‐10V
1.6
1.3
1.0
0.7
0.4
‐50 ‐25
0 25 50 75 100 125 150
T J ‐ Junction Temperature (°C)
Transfer Characteristics
15
VD S = ‐5.0V
12
T A = ‐55° C
25° C
125° C
9
6
3
0
1
23
‐VG S ,Gate‐Source Voltage
4
5
2012/10/25
EMB21C03G
2.4 On‐Resistance Variation with Drain Current and Gate Voltage
2.2
2.0
1.8
VG S = ‐4.5V
1.6
1.4
1.2
1.0
‐5.0V
‐6.0V
‐7.0V
‐10V
0.8
05
10 15 20
‐I D Drain Current( A )
25
On‐Resistance Variation with Gate‐Source Voltage
0.12
I D = ‐3A
0.09
0.06
0.03
02
TA = 125° C
T A = 25° C
468
‐VG S ‐ Gate‐Source Voltage(V)
10
Body Diode Forward Voltage Variation with
Source Current and Temperature
100
VS D =0V
10
1 TA = 125 ° C
25° C
0.1
‐55° C
0.01
0.001
0.0001
0
0.2 0.4 0.6 0.8
‐VS D ‐ Body Diode Forward Voltage( V )
1.0
1.2 1.4
p.7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ EMB21C03G.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
EMB21C03A | Field Effect Transistor | Excelliance MOS |
EMB21C03G | Field Effect Transistor | Excelliance MOS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |