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PDF EMD14N10H Data sheet ( Hoja de datos )
| Número de pieza | EMD14N10H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
14mΩ
ID 47A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=40A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2016/1/22
EMD14N10H
LIMITS
±30
47
30
100
40
80
40
50
20
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.5
62
UNIT
°C / W
p.1
1 page  
EMD14N10H
10
Gate Charge Characteristics
I D = 20A
VD S = 25V
8
50V
6
4
6000
4500
3000
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
2
0
0
15 30 45
Q g ‐ Gate Charge( nC )
60
1500
0
0
Coss
Crss
25 50 75
VD S ‐ Drain‐Source Voltage( V )
100
103
Maximum Safe Operating Area
102 RDS(ON) Limited
10μs
100μs
101
1ms
10ms
100
DC
TC=25°C
RθJC=2.5°C/W
Vgs=10V
Single Pulse
10‐1
100
101 102
VDS, Drain‐Source Voltage( V )
1
Transient Thermal Response Curve
1200
1000
800
600
400
200
0
0.01
Single Pulse Maximum Power Dissipation
Single Pulse
Rθ J C = 2.5° C/W
TC = 25° C
0.1 1 10 100
Single Pulse Time( mSEC )
1000
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2 10‐1
Notes:
DM
1 10
t 1 ,Time (mSEC)
1.Duty Cycle,D =
t1
t2
2.Rθ J C = 2.5°C/W
3.TJ ‐ T C = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
100
1000
2016/1/22
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMD14N10H.PDF ] | |
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