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Número de pieza | EMB16N06G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB16N06G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
16mΩ
ID 6.7A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=15A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2016/2/1
EMB16N06G
LIMITS
±20
6.7
5.2
35
15
11.25
5.6
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page EMB16N06G
Gate Charge Characteristics
10
I D = 6A
8
VD S = 15V 30V
6
4
2
0
0
15 30
Q g ‐ Gate Charge( nC )
45
60
4000
3000
2000
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
1000
0
0
Coss
Crss
10 20 30
VD S ‐ Drain‐Source Voltage( V )
40
103
Maximum Safe Operating Area
102 RDS(ON) Limited
10μs
101
100μs
1ms
10ms
DC
100
TC=25°C
RθJC=3.5°C/W
Vgs=10V
Single Pulse
10‐1
100
VDS, Dra1in0‐1Source Voltage( V ) 102
1
Transient Thermal Response Curve
Duty Cycle = 0.5
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 50°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1
1
10
100 1000
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.R θ J A = 50°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2016/2/1
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB16N06G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB16N06A | Field Effect Transistor | Excelliance MOS |
EMB16N06CS | Field Effect Transistor | Excelliance MOS |
EMB16N06G | Field Effect Transistor | Excelliance MOS |
EMB16N06H | Field Effect Transistor | Excelliance MOS |
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