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PDF SQJ860EP Data sheet ( Hoja de datos )
| Número de pieza | SQJ860EP | |
| Descripción | Automotive N-Channel MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SQJ860EP (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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www.vishay.com
SQJ860EP
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Single
6.15 mm
1
Top View
5.13 mm
D
1
2S
3S
4S
G
Bottom View
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
Package
40
0.0060
0.0073
60
Single
PowerPAK SO-8L
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C a
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
40
± 20
60
36
43
120
32
51
48
16
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
SYMBOL
RthJA
RthJC
LIMIT
70
3.1
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-1947-Rev. A, 26-Sep-16
1
Document Number: 75516
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
Axis Title
IDM limited
10000
100
10 ID limited
1
Limited by RDS(on) (1)
100 μs
1000
1 ms
10 ms
100 ms, 1 s, 10 s, DC
100
0.1
TC = 25 °C
Single pulse
0.01
0.01 0.1
BVDSS limited
1 10
10
100
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
SQJ860EP
Vishay Siliconix
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Single pulse
0.001
0.01
0.1 1
Square Wave Pulse Duration (s)
Notes:
PDM
t1
t2
1. Duty cycle, D =
t1
t2
2. Per unit base = R thJA = 70 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface nounted
10 100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
S16-1947-Rev. A, 26-Sep-16
5
Document Number: 75516
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SQJ860EP.PDF ] | |
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