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기능 Automotive Dual N-Channel MOSFET
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SQJ974EP 데이터시트, 핀배열, 회로
www.vishay.com
SQJ974EP
Vishay Siliconix
Automotive Dual N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A) per leg
Configuration
Package
100
0.0255
0.0325
30
Dual
PowerPAK SO-8L
PowerPAK® SO-8L Dual
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1 D2
6.15 mm
1
Top View
5.13 mm
D1
D2
1
2 S1
3 G1
4 S2
G2
Bottom View
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
Continuous Source Current (Diode conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TC = 125 °C
L = 0.1 mH
ID
IS
IDM
IAS
EAS
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d, e
TC = 25 °C
TC = 125 °C
PD
TJ, Tstg
LIMIT
100
± 20
30
17
30
65
22
25
48
16
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
SYMBOL
RthJA
RthJC
LIMIT
85
3.1
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-1319-Rev. A, 04-Jul-16
1
Document Number: 78092
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SQJ974EP pdf, 반도체, 판매, 대치품
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SQJ974EP
Vishay Siliconix
2.25
1.90
ID = 10A
1.55
1.20
0.85
Axis Title
VGS = 10 V
10000
1000
VGS = 4.5 V
100
100
10
1
0.1
0.01
Axis Title
TJ = 150 °C
10000
1000
TJ = 25 °C
100
0.50 10
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
0.001
0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source Drain Diode Forward Voltage
Axis Title
0.20 10000
0.16
1000
0.12
0.08
0.04
TJ = 150 °C
100
0.00
0
TJ = 25 °C
2468
VGS - Gate-to-Source Voltage (V)
2nd line
10
10
On-Resistance vs. Gate-to-Source Voltage
Axis Title
0.40 10000
0.10
-0.20
-0.50
ID = 5 mA
1000
100
-0.80
ID = 250 μA
-1.10
-50 -25
10
0 25 50 75 100 125 150 175
TJ - Temperature (°C)
2nd line
Threshold Voltage
120
ID = 1 mA
117
114
Axis Title
10000
1000
111
100
108
105 10
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
1000
100
Axis Title
IDM limited
10000
100 μs 1000
10
1
Limited by RDS(on) (1)
1 ms
10 ms
100 ms,
1
s1, 0100
s,
DC
0.1
TC = 25 °C
Single pulse
0.01
0.01
0.1
BVDSS limited
1 10 100
10
1000
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
S16-1319-Rev. A, 04-Jul-16
4
Document Number: 78092
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SQJ974EP

Automotive Dual N-Channel MOSFET

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