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PDF SQJ990EP Data sheet ( Hoja de datos )

Número de pieza SQJ990EP
Descripción Automotive Dual N-Channel MOSFET
Fabricantes Vishay 
Logotipo Vishay Logotipo



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www.vishay.com
SQJ990EP
Vishay Siliconix
Automotive Dual N-Channel 100 V (D-S) 175 °C MOSFETs
PowerPAK® SO-8L Dual Asymmetric
1
Top View
5.13 mm
D1
D2
1
2 S1
3 G1
4 S2
G2
Bottom View
FEATURESS
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Optimized for synchronous buck applications
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1 D2
PRODUCT SUMMARY
N-CHANNEL 1 N-CHANNEL 2
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
100
0.0400
0.0505
17
Dual N
100
0.0190
0.0235
34
Package
PowerPAK SO-8L Dual Asymmetric
G1 G2
S1
N-Channel 1 MOSFET
S2
N-Channel 2 MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL N-CHANNEL 1 N-CHANNEL 2
Drain-Source Voltage
VDS 100
100
Gate-Source Voltage
VGS ± 20
Continuous Drain Current
Continuous Source Current (Diode conduction)
Pulsed Drain Current b
TC = 25 °C
TC = 125 °C
ID
IS
IDM
17
10
20 a
40
34
19
44
80
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
17
14.4
28
39.2
Maximum Power Dissipation b
TC = 25 °C
TC = 125 °C
PD
27
9
48
16
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d, e
TJ, Tstg
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
N-CHANNEL 1 N-CHANNEL 2
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB mount c
RthJA
RthJC
85
5.5
85
°C/W
3.1
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-1496-Rev. A, 25-Jul-16
1
Document Number: 77789
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SQJ990EP pdf
www.vishay.com
N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SQJ990EP
Vishay Siliconix
Axis Title
100 10000
Axis Title
0.25 10000
10
1
0.1
0.01
TJ = 150 °C
TJ = 25 °C
1000
100
0.001
0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source Drain Diode Forward Voltage
0.20
1000
0.15
0.10
0.05
TJ = 150 °C
100
0.00
0
TJ = 25 °C
2468
VGS - Gate-to-Source Voltage (V)
2nd line
10
10
On-Resistance vs. Gate-to-Source Voltage
Axis Title
0.5 10000
0.2
1000
-0.1
ID = 5 mA
-0.4
100
-0.7
ID = 250 μA
-1.0
-50 -25
10
0 25 50 75 100 125 150 175
TJ - Temperature (°C)
2nd line
Threshold Voltage
125
ID = 1 mA
122
Axis Title
119
10000
1000
116
100
113
110 10
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
2.5
ID = 6 A
2.1
1.7
1.3
0.9
Axis Title
VGS = 10 V
10000
1000
VGS = 4.5 V
100
0.5 10
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
1000
100
10
Axis Title
IDM limited
10000
100 μs
1000
1
Limited by RDS(on) (1)
1 ms
10 ms 100
100 ms, 1 s, 10 s, DC
0.1
0.01
TC = 25 °C
Single pulse
BVDSS limited
10
0.01 0.1 1 10 100 1000
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
S16-1496-Rev. A, 25-Jul-16
5
Document Number: 77789
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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