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PDF SQJB80EP Data sheet ( Hoja de datos )
| Número de pieza | SQJB80EP | |
| Descripción | Automotive Dual N-Channel MOSFET | |
| Fabricantes | Vishay | |
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www.vishay.com
SQJB80EP
Vishay Siliconix
Automotive Dual N-Channel 80 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Dual
6.15 mm
1
Top View
5.13 mm
D1
D2
1
2 S1
3 G1
4 S2
G2
Bottom View
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1 D2
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A) per leg
Configuration
Package
80
0.0190
0.0240
30
Dual
PowerPAK SO-8L
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
VDS
Gate-source voltage
Continuous drain current
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TC = 25 °C a
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
80
± 20
30
20
30
84
20
20
48
16
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
RthJA
RthJC
LIMIT
85
3.1
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-1948-Rev. A, 26-Sep-16
1
Document Number: 76245
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
Axis Title
IDM limited
10000
100
100 μs 1000
10
ID limited
1 ms
1
Limited by RDS(on) (1)
10 ms
100 ms, 1 s,11000s, DC
0.1
0.01
TC = 25 °C
Single pulse
BVDSS limited
10
0.01 0.1 1 10 100 1000
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
SQJB80EP
Vishay Siliconix
2
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (s)
Notes:
P DM
t1
1.
t2
Duty cycle, D =
t1
t2
2. Per unit base = R thJA = 85 °C/W
3. TJM - TA = P DM ZthJA(t)
4. Surface mounted
10 100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S16-1948-Rev. A, 26-Sep-16
5
Document Number: 76245
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SQJB80EP.PDF ] | |
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