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기능 Automotive Dual N-Channel MOSFET
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SQJQ480E 데이터시트, 핀배열, 회로
www.vishay.com
SQJQ480E
Vishay Siliconix
Automotive N-Channel 80 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
ID (A)
Configuration
Package
80
0.003
150
Single
PowerPAK 8 x 8L
PowerPAK® 8 x 8L Single
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Fully lead (Pb)-free device
• Thin 1.9 mm height
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
D
1
Top View
8.1 mm
1
2G
3S
4S
S
Bottom View
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode conduction)
Pulsed Drain Current a
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) c, d
TJ, Tstg
LIMIT
80
± 20
150
87
124
210
53
140
136
45
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB mount b
RthJA
50
°C/W
RthJC
1.1
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-1373-Rev. A, 11-Jul-16
1
Document Number: 76718
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SQJQ480E pdf, 반도체, 판매, 대치품
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SQJQ480E
Vishay Siliconix
10
ID = 10 A
VDS = 50 V
8
Axis Title
6
10000
1000
Axis Title
2.5
ID = 10 A
2.1
1.7 VGS = 10 V
10000
1000
4 1.3
100
VGS = 7.5 V
100
2 0.9
0 10
0 20 40 60 80 100
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
0.5 10
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
Axis Title
100 10000
10
1 TJ = 150 °C
TJ = 25 °C
1000
0.1
0.01
100
0.001
0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source Drain Diode Forward Voltage
105
ID = 10 mA
100
Axis Title
95
10000
1000
90
100
85
80 10
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
0.015
Axis Title
10000
0.012
0.009
1000
0.006
TJ = 150 °C
100
0.003
TJ = 25 °C
0.000
0
2468
VGS - Gate-to-Source Voltage (V)
2nd line
10
10
On-Resistance vs. Gate-to-Source Voltage
Axis Title
0.5 10000
0
ID = 5 mA
1000
-0.5
-1.0
100
ID = 250 μA
-1.5
-2.0
-50 -25
10
0 25 50 75 100 125 150 175
TJ - Temperature (°C)
2nd line
Threshold Voltage
S16-1373-Rev. A, 11-Jul-16
4
Document Number: 76718
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SQJQ480E 전자부품, 판매, 대치품
www.vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
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or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Revision: 13-Jun-16
1 Document Number: 91000

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SQJQ480E

Automotive Dual N-Channel MOSFET

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