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PDF SQJQ900E Data sheet ( Hoja de datos )

Número de pieza SQJQ900E
Descripción Automotive Dual N-Channel MOSFET
Fabricantes Vishay 
Logotipo Vishay Logotipo



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SQJQ900E
Vishay Siliconix
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET
PowerPAK® 8 x 8L Dual
1
Top View
8.1 mm
D1
D2
1
2 G1
3 S1
4 S2
G2
Bottom View
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Fully lead (Pb)-free device
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1 D2
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A) per leg
Configuration
Package
40
0.0039
0.0047
100
Dual
PowerPAK 8 x 8L
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TC = 25 °C a
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
40
± 20
100
60
68
400
50
125
75
25
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
RthJA
80
°C/W
RthJC
2
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S17-0486-Rev. B, 03-Apr-17
1
Document Number: 62796
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SQJQ900E pdf
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
100
10
1
0.1
IDM Limited
ID Limited
Limited by RDS(on)*
1 ms
10 m
100 ms
1 s, 10 s, DC
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01 0.1 1 10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
SQJQ900E
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
0.001
Single Pulse
0.01
0.1 1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
S17-0486-Rev. B, 03-Apr-17
5
Document Number: 62796
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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