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PDF SUA70090E Data sheet ( Hoja de datos )
| Número de pieza | SUA70090E | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay | |
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SUA70090E
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () MAX.
0.0093 at VGS = 10 V
100
0.0100 at VGS = 7.5 V
ID (A)
42.8
33
Qg (TYP.)
33 nC
Thin-Lead TO-220 FULLPAK
G DS
Ordering Information:
SUA70090E-E3 (lead (Pb)-free and halogen-free)
FEATURES
• ThunderFET® power MOSFET
• Qgd / Qgs ratio < 1 optimizes switching
characteristics
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please
see www.vishay.com/doc?99912
APPLICATIONS
• Power supply
- Secondary synchronous rectification
• DC/DC converter
• Power tools
• Motor drive switch
• DC/AC inverter
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
TC = 25 °C
TC = 70 °C
ID
IDM
Avalanche Current
Single Avalanche Energy a
Maximum Power Dissipation a
L = 0.1 mH
TC = 25 °C
TC = 70 °C
IAS
EAS
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
100
± 20
42.8
34.2
120
40
80
35.7
22.9
-55 to +150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount) b
Junction-to-Case (Drain)
Notes
a. Duty cycle 1 %.
b. When mounted on 1" square PCB (FR4 material).
SYMBOL
RthJA
RthJC
LIMIT
60
3.5
UNIT
°C/W
S16-0163-Rev. A, 01-Feb-16
1
Document Number: 65438
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
50 10000
40
1000
30
20
100
10
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
Current De-Rating
SUA70090E
Vishay Siliconix
1
Duty Cycle = 0.5
Axis Title
10000
0.2
0.1
0.05
0.02
Single pulse
0.1
0.0001
0.001
0.01
0.1 1
Square Wave Pulse Duration (s)
2nd line
Notes:
PDM
1000
t1
t2
1. Duty cycle, D =
t1
t2
2. Per unit base = RthJC = 3.5 °C/W
100
3. TJM - TA = PDMZthJA (t)
4. Surface mounted
10
10 100 1000
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65438.
S16-0163-Rev. A, 01-Feb-16
5
Document Number: 65438
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SUA70090E.PDF ] | |
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