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What is EMD03N06FS?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMD03N06FS Datasheet PDF - Excelliance MOS

Part Number EMD03N06FS
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


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No Preview Available ! EMD03N06FS datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
60V 
D
RDSON (MAX.) 
4.1mΩ 
ID  90A  G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
EMD03N06FS
LIMITS 
UNIT 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=50A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
±20 
90 
56 
200 
50 
125 
62.5 
56 
22 
55 to 150 
V 
A 
mJ 
W 
°C 
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=30A, Rated VDS=60V N-CH 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
TYPICAL 
MAXIMUM 
UNIT 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
2.2 
62.5 
°C / W 
2016/10/25 
p.1 

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EMD03N06FS equivalent
  EMD03N06FS
 
 
 
Gate Charge Characteristics
  10
I D  = 24A
VD  S = 15V
 8
25V
 
 6
 4
4000
Capacitance Characteristics
3000
Ciss
f  =  1MHz
VG  S  = 0 V
2000
Coss
 
2
 
 0
0 15 30 45 60
Q g  ‐ Gate Charge( nC )
 
1000
0
0
Crss
10
20 30 40
VD  S ‐ DrainSource Voltage( V )
50
  1000
M a x im u m  S a fe  O p e ra tin g  A re a
 
  100
R
 
 D S ( O N 
L
)
i
m
i
t
 
  10
 
1 0μ   s
1m s 100 μ s
D
10
C
10m
0ms
s
  1 V G   S  =   1 0 V
S IN G LE  P U LS E
  R θ   J C  =   2 . 2  °C / W
T c   =   2 5  °C
0 .1
  0 .1 1
10
V D   S  , D r a i n ‐   S o u r c e   V o l t a g e (   V  )
100
600
500
400
300
200
100
0
0.01
Single Pulse Maximum Power Dissipation
Single Pulse
RTθC    J= C = 2 25°. C2° C/W
0.1 1 10 100
Single Pulse Time( sec ) 
1000
 
Transient Thermal Response Curve
 
  100
D=0.5
 
0.2
 
  101 0.1
0.05
  0.02
  0.01
102
single pulse
Note :
  1. RθJC(t)=2.2°C/W Max.
  2. Duty Cycle, D=t1/ t2
  3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
 
105 104 103 102 101 100 101
  t1,Time( sec )
 
 
 
 
 
2016/10/25 
p.5 


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Featured Datasheets

Part NumberDescriptionMFRS
EMD03N06FSThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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