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What is EMB26N10G?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB26N10G Datasheet PDF - Excelliance MOS

Part Number EMB26N10G
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMB26N10G download ( pdf file ) link at the bottom of this page.





Total 5 Pages



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No Preview Available ! EMB26N10G datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
100V 
D
RDSON (MAX.) 
30mΩ 
ID  9A 
G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=9A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TA = 25 °C 
TA = 100 °C 
Operating Junction & Storage Temperature Range 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
2015/1/29 
EMB26N10G
LIMITS 
±20 
9 
6.4 
36 
9 
4 
2 
2.5 
1 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
25 
50 
UNIT 
°C / W 
p.1 

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EMB26N10G equivalent
  EMB26N10G
 
 
 
  10
Gate Charge Characteristics
  I D  = 9A
 8
4000
Ciss
3000
Capacitance Characteristics
f  =  1MHz
VG  S  = 0 V
 6
 
4
 
 2
 0
 0
VD  S   = 25V 50V
10 20 30
Q g  ‐ Gate Charge( nC )
40
2000
Coss
1000
Crss
0
0
25 50 75
VD  S ‐ DrainSource Voltage( V )
100
 
100
M axim u m  Safe O p era tin g  A rea
 
  10 R D  S ( O N )Limit
100μs
1ms
  10ms
 1
 
100ms
1s
DC
  0.1
  VG  S = 10V
    Single Pulse
  R  JA = 50°C/W
0.01   TA   = 25°C
  0.1 1 10 100
VD S    ‐  D r a in S o u r c e  V o lta g e (  V  )
 
1000
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ  J A = 50°C/W
40 TA  = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
 
1
  Duty Cycle = 0.5
Transient Thermal Response Curve
  0.2
0.1
  0.1
0.05
  0.02
0.01
  0.01
Single Pulse
 
  0.001
10 4
10 3
10 2
10 1
1
  t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ  J A  =50°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) * RθJA
10 100
1000
 
 
 
 
 
 
2015/1/29 
p.5 


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Information Total 5 Pages
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