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PDF EMB07N03HR Data sheet ( Hoja de datos )
| Número de pieza | EMB07N03HR | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
7mΩ
ID 50A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB07N03HR
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
50
35
140
Avalanche Current
IAS 37.5
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=37.5A, RG=25Ω
L = 0.05mH
EAS
EAR
70
15
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
50
20
‐55 to 150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=25A, Rated VDS=25V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2.5
°C / W
50
2014/12/1
p.1
1 page  
G a te C h a rg e C h a ra c te ris tic s
12
ID= 2 5 A
10
EMB07N03HR
10 4
C a p a c ita n c e C h a ra c te ristic s
8
6
VDS =5V
15V
10V
4
2
0
0 3 6 9 12 15 18 21
Q g ,G a te C h a rg e ( n C )
10 3
C is s
10 2
C o ss
C rss
f = 1 M H z
V GS= 0 V
10
0
5 10 15 20 25
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
30
300
100 R d s ( o n ) Limit
10
Maximum Safe Operating Area
10μ s
100μ s
1ms
DC10100mmss
3000
2500
2000
1500
1000
Single Pulse Maximum Power Dissipation
SINGLE PULSE
Rθ J C = 2.5° C/W
TC = 25° C
1
0.5
0.5
VG S = 10V
RSIθ N J C G= L2E. 5P° UC/LWSE
Tc = 25 °C
1 10
VD S ,Drain‐Source Voltage( V )
100
500
0 0.01
0.1
1
10 100
Single Pulse Time ( mSEC )
1000
1
D uty Cycle = 0.5
Transient Therm al Response Curve
0.2
0 .1 0 .1
0.05
0.02
0.01
0 .0 1
S in g le P u lse
1 0‐2
1 0‐1
1 10
t 1 ,T im e ( m S E C )
N o te s:
DM
1.D uty Cycle,D =
t1
t2
2 .R θ J C = 2 .5 ° C / W
3 .TJ ‐ T C = P * R θ J C (t )
4 .R θ J C ( t ) = r ( t ) * Rθ JC
100
1000
2014/12/1
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB07N03HR.PDF ] | |
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