EMB07N03V Datasheet PDF - Excelliance MOS
| Part Number | EMB07N03V | |
| Description | Field Effect Transistor | |
| Manufacturers | Excelliance MOS | |
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There is a preview and EMB07N03V download ( pdf file ) link at the bottom of this page. Total 5 Pages | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
7mΩ
ID 24A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=15A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2014/12/1
EMB07N03V
LIMITS
±20
24
17
96
15
11.25
5.62
25
8
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
W
°C
MAXIMUM
6
50
UNIT
°C / W
p.1
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EMB07N03V
G a te C h a rg e C h a ra c te ris tic s
12
ID = 1 4 A
10
V DS =5V
8
10V
15V
6
4
2
0
0 3 6 9 12 15 18 21
Q g ,G a te C h a rg e ( n C )
100
R D S (O N ) Limit
10
1
Maximum Safe Operating Area
100μs
1ms
10ms
100ms
1s
0.1
VG S = 10V
Single Pulse
R J A = 50°C/W
TA = 25°C
10s
DC
0.01
0.1
1 10
VD S ‐ Drain‐Source Voltage( V )
100
10 4
C a p a c ita n c e C h a ra c te ris tic s
10 3
C iss
10 2
C o ss
C rss
f = 1 M H z
V GS= 0 V
10
0
5 10 15 20 25
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 50°C/W
40 TA = 25°C
30
30
20
10
0
0.001
0.01 0.1
1
10 100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A = 50°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2014/12/1
p.5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMB07N03V electronic component. |
| Information | Total 5 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ EMB07N03V.PDF Datasheet ] | |
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