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PDF EMB02N03HR Data sheet ( Hoja de datos )
| Número de pieza | EMB02N03HR | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
1.7mΩ
ID
100A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB02N03HR
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=80A, RG=25Ω
Repetitive Avalanche Energy3
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
100
100
400
80
320
160
83
33
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=30V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient4
RJA
1Package Limited.
2Pulse width limited by maximum junction temperature.
3Duty cycle 1％
450°C / W when mounted on a 1 in2 pad of 2 oz copper.
1.5
°C / W
50
2014/8/1
p.1
1 page  
EMB02N03HR
G a te C h a rg e C h a ra c te ris tic s
12
ID = 3 0 A
10
10 4
C a p a c ita n c e C h a ra c te ris tic s
C is s
8
6
4
2
0
0
V DS =5V
15V
10V
30 60
Q g ,G a te C h a rg e ( n C )
90
10 3
10 2
C o ss
C rss
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
30
1000
M a x im u m S a fe O p e ra tin g A re a
100
R d s ( o n )L im it
10
1ms
D
1
C
0
10
0m
m
s
s
1 0 μs
10 0 μs
Single Pulse Maximum Power Dissipation
3000 RSTiθC n J= Cg = l2e 15 °P. 5Cu° Cls/eW
2500
2000
1500
1 V G S = 1 0 V
S in g le P u lse
R θ J C = 1 . 5 °C / W
T c = 2 5 °C
0 .1
0 .1
1 10
V D S , D r a i n ‐ S o u r c e V o l t a g e ( V )
100
1
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
0.01
S in g le P u ls e
10‐2
1 0‐1
Transient Therm al Response Curve
N o tes:
DM
1.D uty C ycle,D =
t1
t2
2 .R θ J C = 1 .5 °C / W
3 .TJ ‐ T C = P * R θ J C (t)
4 .R θ J C (t)= r( t) * RθJC
1 10
t 1 ,T im e ( m S E C )
100
1000
500
0 0.01
0.1 1 10 100
Single Pulse Time ( mSEC )
1000
1000
2014/8/1
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB02N03HR.PDF ] | |
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