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What is EMD50N15G?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMD50N15G Datasheet PDF - Excelliance MOS

Part Number EMD50N15G
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMD50N15G download ( pdf file ) link at the bottom of this page.





Total 5 Pages



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No Preview Available ! EMD50N15G datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
150V 
D
RDSON (MAX.) 
50mΩ 
ID  7A 
G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
DrainSource Voltage 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.2mH, ID=7A, RG=25Ω 
L = 0.1mH 
Power Dissipation 
TA = 25 °C 
TA = 100 °C 
Operating Junction & Storage Temperature Range 
VDSS 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
350°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
2012/5/22 
EMD50N15G
LIMITS 
150 
±30 
7 
4.5 
28 
7 
4.9 
2.45 
2.5 
1 
55 to 150 
UNIT 
V 
V 
A 
mJ 
W 
°C 
MAXIMUM 
25 
50 
UNIT 
°C / W 
p.1 

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EMD50N15G equivalent
 
 
 
 
  10
ID   = 7A
 
8
 
Gate Charge Characteristics
 6
 4
 
VD S  = 50V
80V
 2
 0
 0
20 40 60
Q g  ‐ Gate Charge( nC )
80
 
  100
M axim um  Safe O perating Area
   10 RDS(ON)  Limited
 
 1
 
10uS
100uS
1mS
DC100m1S0mS
  0.1   TA=25°C
  RθJA=125°C/W
  Vgs=10V
    Single Pulse
0.01
  0.1 1
10 100 1000
VDS, DrainSource Voltage( V )
 
 
 1
Duty Cycle = 0.5
 
0.2
  0.1
0.1
  0.05
Transient Thermal Response Curve
  0.02
0.01
  0.01
 
Single Pulse
 
0.001
  10 4
 
10 3
10 2
10 1
t 1 ,Time (sec)
1
 
 
2012/5/22 
  EMD50N15G
6000
4500
Ciss
Capacitance Characteristics
f  =  1MHz
VG  S  = 0 V
3000
1500
Coss
Crss
0
0 10 20 30
VD  S ‐ DrainSource Voltage( V )
40
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ  J A = 125°C/W
40 TA  = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ  J  A =125°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) + RθJA
10 100
1000
p.5 


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Part Details

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Information Total 5 Pages
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