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Número de pieza | EMBA5N10G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMBA5N10G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
150mΩ
ID 4A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=4A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMBA5N10G
LIMITS
±20
4
2.8
16
4
0.8
0.4
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/10/8
TYPICAL
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page EMBA5N10G
Gate Charge Characteristics
10
I D = 2A
8
6
VD S = 50V 80V
4
2
0
0
8 16
Q g ‐ Gate Charge( nC )
24
1500
1350
1200
1050
Capacitance Characteristics
f = 1M Hz
V G S = 0 V
Ciss
900
750
600
450
300 Coss
150
0 Crss
32 0 20 40 60 80 100
VD S ‐ D rain‐Source Voltage( V )
100
M aximum Safe Operating Area
10
R D S (O N )Limit
1
0.1
1001u0SuS
1mS
10mS
DC100mS
VG S = 1 0 V
Single Pulse
R JA = 5 0 ° C / W
T A = 2 5 ° C
0.010.1 1 10 100 1000
VD S ‐ D r a in ‐S o u r c e V o lt a g e ( V )
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 50°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.R θ J A = 50°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2013/10/8
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMBA5N10G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMBA5N10A | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Excelliance MOS |
EMBA5N10CS | Field Effect Transistor | Excelliance MOS |
EMBA5N10G | Field Effect Transistor | Excelliance MOS |
EMBA5N10V | Field Effect Transistor | Excelliance MOS |
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