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PDF EMB20P06A Data sheet ( Hoja de datos )
| Número de pieza | EMB20P06A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐60V
D
RDSON (MAX.)
15mΩ
ID
‐40A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐40A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2015/7/22
EMB20P06A
LIMITS
±20
‐40
‐27
‐100
‐40
80
40
50
25
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.5
50
UNIT
°C / W
p.1
1 page  
EMB20P06A
10
I D = ‐ 20A
8
Gate Charge Characteristics
6
V D S = ‐ 15V ‐ 30V
4
2
0
0 40 80 120
Q g ‐ Gate Charge( nC )
160
10000
8000
6000
4000
2000
0
0
Capacitance Characteristics
f = 1 MHz
VG S = 0 V
Ciss
Coss
Crss
15 30
45
‐ VD S , Drain‐Source Voltage( V )
60
Maximum Safe Operating Area
103
102 RDS(ON) Limited
10μs
101
100
TC=25°C
RθJC=2.5°C/W
Vgs=‐10V
Single Pulse
10‐1
100
100μs
1ms
10ms
DC
‐VDS, Dra1i0n1‐Source Voltage( V ) 102
3000
2500
2000
1500
1000
500
0 0.01
Single Pulse Maximum Power Dissipation
RSθi n JC g =le 2 P.5u° Cls/eW
TC = 25° C
0.1 1 10
Single Pulse Time( sec )
100
1000
100
D=0.5
0.2
0.1
10‐1
0.05
0.02
0.01
10‐2
Transient Thermal Response Curve
single pulse
※Note :
1. RθJC(t)=2.5°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100
t1,Time( sec )
101
2015/7/22
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB20P06A.PDF ] | |
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