|
|
PDF EMFA0P02V Data sheet ( Hoja de datos )
| Número de pieza | EMFA0P02V | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EMFA0P02V (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐20V
D
RDSON (MAX.)
100mΩ
ID
‐4.5A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2016/1/25
EMFA0P02V
LIMITS
±12
‐4.5
‐3.3
‐18
2.5
1.6
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
6
50
UNIT
°C / W
p.1
1 page  
EMFA0P02V
Gate Threshold Voltage v.s. Junction Temperature
1.50
1.25
1.00
0.75
Single Pulse Maximum Power Dissipation
20
Single Pulse
Rθ J A = 50°C/W
TA = 25°C
15
10
0.50
0.25
5
00
‐50 0 50 100 150
TJ ‐ Junction Temperature ( °C )
0.001
0.01 0.1
1
10 100
t 1 ,Time ( SEC )
1000
100 Maximum Safe Operating Area
10μs
10 R D S ( O N ) Limit
100μs
1ms
10ms
1
100ms
1s
DC
0.1
VG S = ‐4.5V
Single Pulse
R J A = 50°C/W
T A = 25°C
0.01
0.1 1 10 100
‐VD S ‐ Drain‐Source Voltage( V )
Transient Thermal Response Curve
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Single Pulse
0.02
0.01
Notes:
P DM
t1
t2 t1
1.Duty Cycle,D =
t2
2.Rθ J A =50°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
0.01
10‐4 10‐3
10‐2
10‐1 1
10
100 1000
t1 ,Time ( SEC )
2016/1/25
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMFA0P02V.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EMFA0P02J | Field Effect Transistor | Excelliance MOS |
| EMFA0P02JS | Field Effect Transistor | Excelliance MOS |
| EMFA0P02M | Field Effect Transistor | Excelliance MOS |
| EMFA0P02V | Field Effect Transistor | Excelliance MOS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |