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PDF EM5810A Data sheet ( Hoja de datos )
| Número de pieza | EM5810A | |
| Descripción | Step-Down Converter | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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10A 5V/12V Step-Down Converter
EM5810/A
General Description
EM5810/A is a synchronous rectified PWM
controller with a built in high-side power MOSFET
operating with 5V or 12V supply voltage. It
achieves 10A peak output current with excellent
load and line regulation. This device operates at
200/300kHz and provides an optimal level of
integration to reduce size and cost of the power
supply.
This part includes internal soft start, internal
compensation networks, over current protection,
under voltage protection, and shutdown function.
This part is available in SOP-8/PSOP-8 package.
Ordering Information
Part Number
EM5810GE
EM5810AGE
Features
Package
SOP-8 EP
SOP-8 EP
Frequency
200kHz
300kHz
Applications
Notebook & Netbook
Graphic Cards & MB
Low Voltage Logic Supplies
Pin Configuration
LGATE
VCC
FB
EN
PSOP-8
VIN
GND
BOOT
NC
PHASE
Typical Application Circuit
Operate from 5V to 12V Voltage Supply
25mΩ Internal Power MOSFET Switch
0.6V VREF with 1.5% Accuracy
Voltage Mode PWM Control
200/300kHz Fixed Frequency Oscillator
0% to 80% Duty Cycle
Internal Soft Start
Over Current Protection
Integrated Bootstrap Diode
Adaptive Non-Overlapping Gate Driver
Under Voltage Protection
Over Voltage Protection
2012/10/4
A.7
1
1 page  
EM5810/A
Internal Oscillator
Free Running Frequency
Ramp Amplitude
Error Amplifier
FSW
△VOSC
EM5810
EM5810A
170 200 230 KHz
255 300 345 KHz
1 Vp-p
Open Loop DC Gain
Gain-Bandwidth Product
AO
GBW
Guaranteed by Design
Guaranteed by Design
55 70
10
dB
MHz
Slew Rate
Trans-conductance
PWM Controller Gate Drivers
SR
gm
Guaranteed by Design
Guaranteed by Design
36
V/us
0.2 0.7 mS
Lower Gate Sourcing Current
Lower Gate Sinking Current
Lower Gate RDS(ON) Sinking
PHASE Falling to LGATE Rising
Delay
ILG_SRC
ILG_SNK
RLG_SNK
VCC – VLGATE = 6V
VLGATE = 6V
VLGATE = 0.1V
VCC = 12V; VPHASE < 1.2V to VLGATE >
1.2V
-1
1.5
24
30 90
A
A
Ω
ns
LGATE Falling to PHASE Rising
Delay
VCC = 12V; VLGATE < 1.2V to VPHASE >
1.2V
30 90 ns
High-Side MOSFET
Switch ON Resistance
Reference Voltage
RDS(ON)
EM5810G/EM5810AG ,VCC = 12V
EM5810GE/EM5810AGE,VCC = 12V
20 mΩ
35 mΩ
Nominal Feedback Voltage
Enable Voltage
VFB
0.591 0.6 0.609 V
EN Enable Threshold
Protection section
VEN
0.3 0.35 V
FB Under Voltage Protection
VFB_UVP FB falling
55 65 75 %
FB Over Voltage Protection
VFB_OVP FB rising
115 130 145 %
VCC Over Voltage Protection
VCC_OVP
16 17 18 V
Over Current Threshold
VOCP
-425 -375 -325 mV
Soft-Start Interval
Temperature Shutdown
TSS
TSD Guaranteed by Design
2.4 3.6 5.4 ms
150 165
℃
Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. θJA is measured in the natural convection at TA = 25°C on a low effective thermal conductivity test board of
JEDEC 51-3 thermal measurement standard.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
2012/10/4
A.7
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet EM5810A.PDF ] | |
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