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PDF STK581U3C2D-E Data sheet ( Hoja de datos )
| Número de pieza | STK581U3C2D-E | |
| Descripción | Intelligent Power Module | |
| Fabricantes | ON Semiconductor | |
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STK581U3C2D-E
Intelligent Power Module (IPM)
600 V, 30 A
Overview
This “Inverter IPM” is highly integrated device containing all High Voltage
(HV) control from HV-DC to 3-phase outputs in a single SIP module (Single-In
line Package). Output stage uses IGBT/FRD technology and implements Under
Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault
Detection output flag. Internal Boost diodes are provided for high side gate
boost drive.
www.onsemi.com
Function
Single control power supply due to Internal bootstrap circuit for high side
pre-driver circuit
All control input and status output are at low voltage levels directly compatible
with microcontrollers
Built-in cross conduction prevention
Externally accessible embedded thermistor for substrate temperature
measurement
The level of the over-current protection current is adjustable with the external
resistor, “RSD”
Certification
UL1557 (File Number : E339285)
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Symbol
Conditions
Ratings
Supply voltage
Collector-emitter voltage
Output current
VCC
VCE
Io
P to N, surge < 500 V *1
P to U,V,W or U,V,W to N
P, N, U,V,W terminal current
P, N, U,V,W terminal current at Tc = 100C
450
600
±30
±15
Output peak current
Iop P, N, U,V,W terminal current for a Pulse width of 1 ms.
±45
Pre-driver voltage
Input signal voltage
FAULT terminal voltage
Maximum power dissipation
VD1,2,3,4
VIN
VFAULT
Pd
VB1 to U, VB2 to V, VB3 to W, VDD to VSS *2
HIN1, 2, 3, LIN1, 2, 3
FAULT terminal
IGBT per channel
20
0.3 to VDD
0.3 to VDD
49
Junction temperature
Tj
IGBT, FRD
150
Storage temperature
Tstg
40 to +125
Operating case temperature Tc
IPM case temperature
40 to +100
Tightening torque
Case mounting screws *3
1.17
Withstand voltage
Vis 50 Hz sine wave AC 1 minute *4
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1 : Surge voltage developed by the switching operation due to the wiring inductance between “P” and “N” terminal.
*2 : Terminal voltage : VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = VDD to VSS
*3 : Flatness of the heat-sink should be 0.15 mm and below.
*4 : Test conditions : AC 2500 V, 1 s.
2000
Unit
V
V
A
A
A
V
V
V
W
C
C
C
Nm
VRMS
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 15 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
September 2016 - Rev. 1
1
Publication Order Number :
STK581U3C2D-E/D
1 page  
Equivalent Block Diagram
STK581U3C2D-E
VB1(1)
U, VS1(2)
VB2(4)
V, VS2(5)
VB3(7)
W,VS3(8)
P(13)
N(12)
HIN1(13)
HIN2(14)
HIN3(15)
LIN1(16)
LIN2(17)
LIN3(18)
FAULT(19)
ISO(20)
VDD(21)
VSS(22)
BD BD BD
U.V.
U.V.
U.V.
Shunt Resistor
Level
Shifter
Level
Shifter
Level
Shifter
Logic
Logic
Logic
Thermistor
(Protection)
Shut down
VDD-Under Voltage
Latch time About 30ms
(Automatic reset)
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5
5 Page 
STK581U3C2D-E
The characteristic of thermistor
Parameter
Resistance
Resistance
B-Constant (25 to 50C)
Temperature Range
Symbol
R25
R100
B
Condition
Tc = 25C
Tc = 100C
Min
99
5.12
4165
40
Typ.
100
5.38
4250
-
Max
101
5.66
4335
+125
Unit
kΩ
kΩ
K
C
Fig. 10
Condition
Pull-up resistor = 39k
Pull-up voltage of TH = 5V
Fig. 11
www.onsemi.com
11
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| PDF Descargar | [ Datasheet STK581U3C2D-E.PDF ] | |
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