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NGTB30N120IHRWG 데이터시트 PDF




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부품번호 NGTB30N120IHRWG 기능
기능 IGBT ( Insulated Gate Bipolar Transistor )
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NGTB30N120IHRWG 데이터시트, 핀배열, 회로
NGTB30N120IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low onstate voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
Features
Extremely Efficient Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Losses IH Cooker Application
Reliable and Cost Effective Single Die Solution
These are PbFree Devices
Typical Applications
Inductive Heating
Consumer Appliances
Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax, 10 ms pulse,
VGE = 15 V
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax 10 ms pulse,
VGE = 0 V
Gateemitter voltage
Transient Gateemitter voltage
(Tpulse = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
Symbol
VCES
IC
ICM
Value
1200
60
30
120
Unit
V
A
A
IF A
60
30
IFM 120 A
VGE
$20
V
$25
PD W
384
192
TJ 40 to +175 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +175
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 A, 1200 V
VCEsat = 2.20 V
Eoff = 0.70 mJ
C
G
E
G
C
E
TO247
CASE 340AL
MARKING DIAGRAM
30N120IHR
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
Package
NGTB30N120IHRWG TO247
(PbFree)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2013
October, 2013 Rev. 1
1
Publication Order Number:
NGTB30N120IHR/D




NGTB30N120IHRWG pdf, 반도체, 판매, 대치품
NGTB30N120IHRWG
TYPICAL CHARACTERISTICS
70 16
60 14
50 12
10
40 TJ = 25°C 8
30
6
20
10 TJ = 150°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
4
2
VCE = 600 V
VGE = 15 V
0 IC = 20 A
0 50 100 150 200 250
VF, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
1.6
1.4
VCE = 600 V
VGE = 15 V
1.2 IC = 30 A
Rg = 10 W
1.0
Eoff
0.8
0.6
0.4
0.2
0
0
20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
1000
td(off)
100 tf
VCE = 600 V
VGE = 15 V
IC = 30 A
Rg = 10 W
10 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Switching Time vs. Temperature
6
VCE = 600 V
5
VGE = 15 V
TJ = 150°C
Rg = 10 W
4
3
Eoff
2
1
0
5
20
35 50
65
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
1000
td(off)
100 tf
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
80 10 5 20 35 50
65
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. IC
80
http://onsemi.com
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NGTB30N120IHRWG 전자부품, 판매, 대치품
NGTB30N120IHRWG
Figure 22. Test Circuit for Switching Characteristics
http://onsemi.com
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관련 데이터시트

부품번호상세설명 및 기능제조사
NGTB30N120IHRWG

IGBT ( Insulated Gate Bipolar Transistor )

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