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부품번호 | NGTB30N120IHRWG 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 10 페이지수
NGTB30N120IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
Features
• Extremely Efficient Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Losses IH Cooker Application
• Reliable and Cost Effective Single Die Solution
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax, 10 ms pulse,
VGE = 15 V
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax 10 ms pulse,
VGE = 0 V
Gate−emitter voltage
Transient Gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
Symbol
VCES
IC
ICM
Value
1200
60
30
120
Unit
V
A
A
IF A
60
30
IFM 120 A
VGE
$20
V
$25
PD W
384
192
TJ −40 to +175 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +175
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 A, 1200 V
VCEsat = 2.20 V
Eoff = 0.70 mJ
C
G
E
G
C
E
TO−247
CASE 340AL
MARKING DIAGRAM
30N120IHR
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
NGTB30N120IHRWG TO−247
(Pb−Free)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 1
1
Publication Order Number:
NGTB30N120IHR/D
NGTB30N120IHRWG
TYPICAL CHARACTERISTICS
70 16
60 14
50 12
10
40 TJ = 25°C 8
30
6
20
10 TJ = 150°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
4
2
VCE = 600 V
VGE = 15 V
0 IC = 20 A
0 50 100 150 200 250
VF, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
1.6
1.4
VCE = 600 V
VGE = 15 V
1.2 IC = 30 A
Rg = 10 W
1.0
Eoff
0.8
0.6
0.4
0.2
0
0
20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
1000
td(off)
100 tf
VCE = 600 V
VGE = 15 V
IC = 30 A
Rg = 10 W
10 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Switching Time vs. Temperature
6
VCE = 600 V
5
VGE = 15 V
TJ = 150°C
Rg = 10 W
4
3
Eoff
2
1
0
5
20
35 50
65
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
1000
td(off)
100 tf
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
80 10 5 20 35 50
65
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. IC
80
http://onsemi.com
4
4페이지 NGTB30N120IHRWG
Figure 22. Test Circuit for Switching Characteristics
http://onsemi.com
7
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NGTB30N120IHRWG | IGBT ( Insulated Gate Bipolar Transistor ) | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |