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NGTB05N60R2DT4G 데이터시트 PDF




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부품번호 NGTB05N60R2DT4G 기능
기능 IGBT ( Insulated Gate Bipolar Transistor )
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NGTB05N60R2DT4G 데이터시트, 핀배열, 회로
NGTB05N60R2DT4G
IGBT
600V, 8A, N-Channel
www.onsemi.com
Features
Reverse Conducting II IGBT
IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V]
IGBT tf=95ns (typ)
Diode VF=1.5V (typ) [IF=5A]
Diode trr=70ns (typ)
5s Short Circuit Capability
Applications
General Purpose Inverter
Electrical Connection
N-Channel
2,4
1
1:Gate
2:Collector
3:Emitter
3 4:Collector
Specifications
Absolute Maximum Ratings at Ta=25C, Unless otherwise specified
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current (DC)
Limited by Tjmax
@Tc=25C *2
@Tc=100C *2
Collector Current (Peak)
Pulse width Llimited by Tjmax
Diode Average Output Current
Power Dissipation
Tc=25C (Our ideal heat dissipation condition) *2
Junction Temperature
Storage Temperature
Symbol
VCES
VGES
IC *1
ICP
IO
PD
Tj
Tstg
Value
600
20
16
8
20
8
56
175
55 to +175
Unit
V
V
A
A
A
A
W
C
C
Note :
*1 Collector Current is calculated from the following formula.
Tjmax - Tc
IC(Tc)= Rth(j-c)×VCE(sat) (IC(Tc))
*2 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching
the device to water-cooled radiator made of aluminum.
4
12
3
DPAK
CASE 369C
Marking Diagram
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January 2015 - Rev. 2
1
Publication Order Number :
NGTB05N60R2DT4G/D




NGTB05N60R2DT4G pdf, 반도체, 판매, 대치품
NGTB05N60R2DT4G
www.onsemi.com
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NGTB05N60R2DT4G 전자부품, 판매, 대치품
NGTB05N60R2DT4G
Package Dimensions
unit : mm
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE E
A
E
b3 B
C
A
c2
4
L3
D
DETAIL A
12 3
H
ZZ
L4
b2
NOTE 7
c
BOTTOM VIEW
e SIDE VIEW
b
TOP VIEW
0.005 (0.13) M C
H
1:Gate
2:Collector
L2
GAUGE
PLANE
BOTTOM VIEW
ALTERNATE
CONSTRUCTION
C
SEATING
PLANE
3:Emitter
4:Collector
L
L1
A1
DETAIL A
ROTATED 90 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN
DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
INCHES
DIM MIN MAX
A 0.086 0.094
A1 0.000 0.005
b 0.025 0.035
b2 0.028 0.045
b3 0.180 0.215
c 0.018 0.024
c2 0.018 0.024
D 0.235 0.245
E 0.250 0.265
e 0.090 BSC
H 0.370 0.410
L 0.055 0.070
L1 0.114 REF
L2 0.020 BSC
L3 0.035 0.050
L4 0.040
Z 0.155
MILLIMETERS
MIN MAX
2.18 2.38
0.00 0.13
0.63 0.89
0.72 1.14
4.57 5.46
0.46 0.61
0.46 0.61
5.97 6.22
6.35 6.73
2.29 BSC
9.40 10.41
1.40 1.78
2.90 REF
0.51 BSC
0.89 1.27
1.01
3.93
GENERIC
MARKING DIAGRAM*
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
STYLE 9:
STYLE 10:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
3. RESISTOR ADJUST
3. CATHODE
4. CATHODE
4. ANODE
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
3.00
0.118
5.80
0.228
1.60
0.063
6.17
0.243
mm
inches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
Device
Package
Shipping
NGTB05N60R2DT4G
DPAK
2500
pcs. / reel
IC Discrete
XXXXXX
A
L
Y
WW
G
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb-Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
note
Pb-Free
And
Halogen Free
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
www.onsemi.com
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부품번호상세설명 및 기능제조사
NGTB05N60R2DT4G

IGBT ( Insulated Gate Bipolar Transistor )

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