|
|
|
부품번호 | WNM07N60 기능 |
|
|
기능 | N-Channel MOSFET | ||
제조업체 | Will Semiconductor | ||
로고 | |||
WNM07N60/WNM07N60F
600V N-Channel MOSFET
Description
The WNM07N60/WNM07N60F is N-Channel
enhancement MOS Field Effect Transistor. Uses
advanced high voltage MOSFET Process and
design to provide excellent RDS (ON) with low gate
charge. This device is suitable for use in popular
AC-DC applications, power switching application
and a wide variety of other applications.
WNM07N60/WNM07N60F
Features
600V@TJ=25°C
Typ.RDS(on)=1.0 Ω
Low gate charge
100% avalanche tested
100% Rg tested
D
GDS
TOT-O22- 0
G
S
GD S
TO-220F
WNM07N60 =Devices code
Y Y =Year
WW =Week
WNM07N60F =Devices code
Y Y =Year
WW =Week
Order Information
Device
Package
WNM07N60_3/T
TO-220
WNM07N60F_3/T TO-220-F
Units/Tube
50
50
Absolution Maximum Ratings TA=25oC unless otherwise noted
Parameter
Symbol WNM07N60
WNM07N60F
Drain-Source Voltage
Gate-Source Voltage
TC=25°C
Continuous Drain Current
TC=100°C
Pulsed Drain Current
Single Pulsed Avalanche Energy C
VDS 600
VGS ±30
7
ID
4.8
600
±30
7*
4.8*
IDM 28
EAS 124
Peak diode recovery dv/dt
dv/dt
5
Power Dissipation B
TC=25°C
156
PD
Derate above 25°C
1.24
34
0.27
Operating and Storage Temperature Range
TJ,TSTG
-55~150
Lead Temperature
Thermal Resistance Ratings
Maximum Junction-to-Ambient A
Maximum Case to Sink
Maximum Junction-to-Case
TL
RθJA
RθCS
RθJC
260
65 65
0.5
0.8 3.6
*Drain current limited by maximum junction temperature.
Unit
V
A
A
mJ
V/ns
W
W/°C
°C
°C
°C/W
Will Semiconductor Ltd. 1 Dec, 2013 - Rev.1.0
WNM07N60/WNM07N60F
10000
F=1MHZ
1000
100
10
Ciss
Coss
Crss
1
100
1 10
V -Drain to Source Voltage(V)
DS
Capacitance
100
10
1 150oC
0.1
0.01
25oC
1E-3
1E-4
1E-5
0.0
0.2 0.4 0.6 0.8 1.0 1.2
V -Source to Drain Voltage(V)
SD
1.4
Body diode forward voltage
100
10 RDS(ON)
limited
1
0.1 TJ(Max)=150°C
TC=25°C
10µs
100µs
1ms
DC 10ms
0.01
1
10 100 1000
V -Drain to Source Voltage(V)
DS
Safe Operating Power (WNM07N60F)
10
RDS(ON)
limited
1
0.1 TJ(Max)=150°C
TC=25°C
DC
0.01
1
10 100
V -Drain to Source Voltage(V)
DS
Safe Operating Power (WNM07N60)
10µs
100µs
1ms
10ms
0.1s
1s
1000
10
V =480V, I =3.5A
DS D
8
6
4
2
0
0 4 8 12
Gate Charge(nC)
Gate charge Characteristics
16
Will Semiconductor Ltd.
4
20
Dec, 2013 - Rev.1.0
4페이지 WNM07N60/WNM07N60F
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Will Semiconductor Ltd. 7 Dec, 2013 - Rev.1.0
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ WNM07N60.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
WNM07N60 | N-Channel MOSFET | Will Semiconductor |
WNM07N60F | N-Channel MOSFET | Will Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |