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PDF WNM2030 Data sheet ( Hoja de datos )
| Número de pieza | WNM2030 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WNM2030 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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WNM2030
WNM2030
Single N-Channel, 20V, 0.95A, Power MOSFET
Http://www.sh-willsemi.com
VDS (V)
20
Rds(on) (ȍ)
0.210@ VGS=4.5V
0.250@ VGS=2.5V
0.305@ VGS=1.8V
ESD Protected
Descriptions
The WNM2030 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM2030 is Pb-free.
SOT-723
D
3
12
GS
Pin configuration (Top view)
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-723
Applications
3
2*
1
2
2 = Device Code
* = Month (A~Z)
Marking
Order information
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Device
Package
Shipping
WNM2030-3/TR SOT-723 8000/Reel&Tape
Will Semiconductor Ltd. 1 Sep, 2014 - Rev.1.5
1 page  
WNM2030
120 0.8
V =0V
100
GS
F=100KHz
0.6
80 T=150oC
60 0.4
40 Ciss
Coss
T=25oC
Crss 0.2
20
0
0 2 4 6 8 10
V - Drain Voltage (V)
DS
Capacitance
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V -Source-to-Drain Voltage(V)
SD
Body diode forward voltage
V =4.5V, V =10V,I =0.55A
4 GS DS D
3
2
1
0
0.0 0.4 0.8 1.2 1.6
Qg (nc)
Gate Charge Characteristics
10
1
0.1 Limited by RDS(on)
0.01
10 ms
100 ms
1s
10 s
DC
0.001
TA = 25 °C
Single Pulse
0.1 1 10
VDS - Drain-to-Source Voltage (V)
Safe operating power
100
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 270 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 5 Sep, 2014 - Rev.1.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WNM2030.PDF ] | |
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