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부품번호 | WNM2046 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Will Semiconductor | ||
로고 | |||
WNM2046
Single N-Channel, 20V, 0.71A, Power MOSFET
VDS (V)
20
Typical Rds(on) (Ω)
0.220@ VGS=4.5V
0.260@ VGS=2.5V
0.315@ VGS=1.8V
WNM2046
Http://www.sh-willsemi.com
G
S
D
Descriptions
DFN1006-3L
The WNM2046 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNM2046 is Pb-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN1006-3L
Applications
D
GS
Pin configuration (Top view)
6 = Device Code
* = Month (A~Z)
Marking
Small Signal Switching
Small Moto Driver
Order information
Device
WNM2046-3/TR
Package
DFN1006-3L
Shipping
10K/Reel&Tape
Will Semiconductor Ltd.
1
Aug, 2014- Rev.1.2
Typical Characteristics (Ta=25oC, unless otherwise noted)
WNM2046
2.0
V =4V
GS
1.6
V =3V
GS
1.2
0.8
V =1.8V
GS
V =2.5V
GS
V =1.5V
GS
1.4
1.2 VDS=0.5V
1.0
0.8
0.6
T=-55°C
T=125°C
T=25°C
0.4
0.0
0.0
0.2 0.4 0.6 0.8 1.0 1.2
V - Drain to Source Voltage(V)
DS
Output characteristics
1.4
0.4
0.2
0.0
0.0
0.5 1.0 1.5 2.0 2.5
VGS - Gate to Source Voltage (V)
Transfer characteristics
3.0
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.0
V =1.8V
GS
V =2.5V
GS
VGS=4.5V
0.5 1.0 1.5
I - Drain to Source Current(A)
DS
2.0
On-Resistance vs. Drain current
1.0
0.8
I =0.55A
D
0.6
0.4
0.2
0.0
1.5
2.0 2.5 3.0 3.5 4.0
V - Gate to Source Voltage(V)
GS
4.5
On-Resistance vs. Gate-to-Source voltage
1.4 VGS=4.5V
ID=0.55A
1.2
1.0
0.8
0.6
-50 -25
0 25 50 75 100 125 150
Temperature(oC)
On-Resistance vs. Junction temperature
1.2
1.1 ID=250uA
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25
0 25 50 75 100 125 150
Temperature(oC)
Threshold voltage vs. Temperature
Will Semiconductor Ltd. 4 Aug, 2014 - Rev.1.2
4페이지 Package outline dimensions
DFN1006-3L
WNM2046
Recommend land pattern (Unit: mm)
Will Semiconductor Ltd.
0.25
Note: This land pattern is for your reference
only. Actual pad layouts may vary depending
on application.
7 Aug, 2014 - Rev.1.2
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ WNM2046.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
WNM2046 | N-Channel MOSFET | Will Semiconductor |
WNM2046B | MOSFET ( Transistor ) | WillSEMI |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |