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PDF WNM3003 Data sheet ( Hoja de datos )
| Número de pieza | WNM3003 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WNM3003 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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WNM3003
N-Channel, 30V, 4.0A, Power MOSFET
WNM3003
Http://www.willsemi.com
V(BR)DSS
30V
Rds(on)
()
0.033@ 10V
0.033@ 10V
0.043 @ 4.5V
Descriptions
The WNM3003 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench technology
and design to provide excellent RDS (ON) with low gate
charge. This device is suitable for use in DC-DC
conversion and power switch applications. Standard
Product WNM3003 is Pb-free.
Features
SOT-23
D
3
12
GS
Configuration (Top View)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
WT3*
WT3
*
= Device Code
= Month (A~Z)
Marking
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Order Information
Device
Package
WNM3003-3/TR SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd.
1 Dec,2011 - Rev.1.1
1 page  
1000
800
600
V =0,f=1MHZ
GS
C
iss
C
oss
C
rss
400
200
0
0 4 8 12 16 20
V Drain-to-Source Voltage (V)
DS
Capacitance
12
10
8
TA = 25_C
6
4
2
0
0.01
0.1
1 10
Time (sec)
100 600
Single pulse power
WNM3003
3.0
2.5 250C
1500C
2.0
1.5
1.0
0.5
0.0
0.0
0.2 0.4 0.6 0.8 1.0
V -Source-to-Drain Voltage(V)
sd
1.2
Body diode forward voltage
100
Limited by RDS(on)
10
100 μs
1 1 ms
10 ms
0.1
TA = 25 °C
Single Pulse
0.01
BVDSS Limited
100 ms
1 s, 10 s
DC
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Safe operating area
Will Semiconductor Ltd.
14
12
V =15V,I =3.1A
DS D
10
8
6
4
2
0
0369
Q ( nC)
g
12 15
Gate Charge Characteristics
5
Dec,2011 - Rev.1.1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNM3003.PDF ] | |
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