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PDF WNM3011 Data sheet ( Hoja de datos )
| Número de pieza | WNM3011 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WNM3011 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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WNM3011
N-Channel, 30V, 5.7A, Power MOSFET
WNM3011
Http://www.willsemi.com
V(BR)DSS
30V
Rds(on)
()
0.028@ 10V
0.039@ 4.5V
Descriptions
The WNM3011 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench technology
and design to provide excellent RDS (ON) with low gate
charge. This device is suitable for use in DC-DC
conversion and power switch applications. Standard
Product WNM3011 is Pb-free.
SOT-23-6L
DDS
65 4
123
DDG
Configuration (Top View)
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23-6L
Applications
6 54
3011
YYWW
1 23
3011
YY
WW
= Device Code
=Year
=Week
Marking
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Order Information
Device
Package
WNM3011-6/TR SOT-23-6L
Shipping
3000/Tape&Reel
Will Semiconductor Ltd. 1 Dec, 2011 - Rev.1.0
1 page  
1000
800
600
V =0,f=1MHZ
GS
C
iss
C
oss
C
rss
400
200
0
0 4 8 12 16 20
V Drain-to-Source Voltage (V)
DS
Capacitance
45
36
27
18
9
0
0.001
0.01 0.1
Time (s)
1
Single pulse power
10
WNM3011
3.0
2.5 250C
1500C
2.0
1.5
1.0
0.5
0.0
0.0
0.2 0.4 0.6 0.8 1.0
V -Source-to-Drain Voltage(V)
sd
1.2
Body diode forward voltage
100
10 0.1ms
1
Limited by RDS(on)
1 ms
10 ms
0.1
0.01
TA = 25 °C
Single Pulse
BVDSS
Limited
100 ms
1s
10 s
DC
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Safe operating power
Will Semiconductor Ltd.
14
12
V =15V,I =3.1A
DS D
10
8
6
4
2
0
0369
Q ( nC)
g
12 15
Gate Charge Characteristics
5
Dec, 2011 - Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNM3011.PDF ] | |
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