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PDF WNMD2156 Data sheet ( Hoja de datos )

Número de pieza WNMD2156
Descripción Dual N-Channel MOSFET
Fabricantes Will Semiconductor 
Logotipo Will Semiconductor Logotipo



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No Preview Available ! WNMD2156 Hoja de datos, Descripción, Manual

WNMD2156
Dual N-Channel, 20V, 6.5A, Power MOSFET
VDS (V)
20
Rds(on) (ȍ)
0.019@ VGS=10V
0.021@ VGS=4.5V
0.025@ VGS=2.5V
0.033@ VGS=1.8V

Descriptions
The WNMD2156 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2156 is Pb-free.
WNMD2156
Http//:www.willsemi.com
TSSOP-8L
D1/D2 S2 S2 G2
8765
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package TSSOP-8L
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
1234
D1/D2 S1 S1 G1
Pin configuration (Top view)
8765
2156
YYWW
1234
2156
= Device Code
YY = Year
WW =Week
Marking
Order information
Device
Package
Shipping
WNMD2156-8/TR TSSOP-8L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Dec,2014 - Rev.1.2

1 page




WNMD2156 pdf
WNMD2156
2000
1600
1200
800
400
0
0
40
30
V =0V
GS
F=1MHz
Ciss
Coss
Crss
2468
V Drain-to-Source Voltage (V)
DS
Capacitance
10
TJ(Max)=150°C
TA=25°C
20
10
0
0.001 0.01
0.1 1 10
Pulse Width (s)
100 1000
1.5
1.2
0.9
T=150oC
0.6
0.3
T=25oC
0.3 0.4 0.5 0.6 0.7
V -Source-to-Drain Voltage(V)
SD
Body diode forward voltage
0.8
100
TJ(Max)=150°C, TA=25°C
RDS(ON)
limited
10
10Ps
100Ps
1
0.1
0.1
DC
10s
1 10
VDS (Volts)
1ms
10ms
100m
1s
100
Single pulse power
2
1
Duty Cycle = 0.5
Safe operating power
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 120 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100 600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 5 Dec,2014 - Rev.1.2

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