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PDF WNMD2174 Data sheet ( Hoja de datos )
| Número de pieza | WNMD2174 | |
| Descripción | Dual N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WNMD2174
Dual N-Channel, 12V, 6A, Power MOSFET
Vsss (V)
Typ Rss(on) (mΩ)
19@ VGS=4.5V
20@ VGS=4.0V
12
22@ VGS=3.1V
25@ VGS=2.5V
ESD Rating:2000V HBM
Descriptions
The WNMD2174 is Dual N-Channel enhancement
MOS Field Effect Transistor and connecting the Drains
on the circuit board is not required because the Drains
of the MOSFET1 and the MOSFET2 are internally
connected. Uses advanced trench technology and
design to provide excellent RSS(ON) with low gate
charge. This device is designed for Lithium-Ion battery
protection circuit. The WNMD2174 is available in
CSP 4L package. Standard Product WNMD2174 is
Pb-free and Halogen-free.
WNMD2174
www.sh-willsemi.com
MOSFET1
Gate 1
MOSFET2
Gate 2
Gate
Protection
Diode
Source 1
Body Diode
CSP 4L
43
Source 2
74
YW
12
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package CSP 4L
Applications
Lithium-Ion battery protection circuit
1: Source 1
2: Gate 1
3: Gate 2
4: Source 2
74 = Device Code
Y = Year
W = Week（A~z）
Pin configuration (TOP view)& Marking
Order information
Device
WNMD2174-4/TR
Package
CSP 4L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.4
1 page  
Typical Characteristics (Ta=25oC, unless otherwise noted)
50 TEST CIRCUIT 5
100
75
40
WNMD2174
TEST CIRCUIT 5
IS=3.0A
30
20
VGS=2.5V
VGS=3.1V
VGS=4.0V
10 VGS=4.5V
0
0.0 0.3 0.6 0.9
VSS-Source to Source Voltage-V
SOURCE CURRENT vs.
SOURCE TO SOURCE VOLTAGE
35 TEST CIRCUIT 5
1.2
30
VGS=2.5V
VGS=3.1V
25
20
VGS=4.5V VGS=4.0V
15
10 20 30 40 50
IS - Source Current(A)
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
SOURCE CURRENT
35
TEST CIRCUIT 5
I =3.0A
S
30
50
25
0
12345
VGS-Gate-to-Source Voltage(V)
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.2
TEST CIRCUIT 3
VSS=10V
IS=1mA
1.0
0.8
0.6
-25
0 25 50 75 100
Tch - Channel Temperature (oC)
125
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2000
TEST CIRCUIT 7
C
VGS=0V
f=1kHz
iss
Coss
C
1500
rss
25
20 VGS=2.5V
VGS=3.1V
VGS=4.0V
15 VGS=4.5V
-25 0 25 50 75 100 125
T -Channel Temperature-oC
ch
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1000
500
2468
VSS-Source to Source Voltage-V
10
CAPACITANCE vs. SOURCE TO SOURCE VOLTAGE
Will Semiconductor Ltd. 5 Jan, 2015 - Rev.1.4
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNMD2174.PDF ] | |
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